Magnetic field screening of 2D materials revealed by magnetic force microscopy

2D materials possess exceptional mechanical properties making them promising candidates for protecting nanostructures. However, the magnetic field screening properties of 2D materials are largely unexplored. Here it is used Magnetic Force Microscopy (MFM) to unveil the effects on the magnetic field...

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Detalles Bibliográficos
Autores: Aldave Valle, Diego Alonso, Lopez-Polin Peña, Guillermo, Calle Ramírez, Esther, Begué, Adrián, Ranchal, Rocío, Martinez, Raul, Bran, Cristina, Burzuri Linares, Enrique, Gómez Herrero, Julio, Ares García, Pablo, Jaafar Ruiz-Castellanos, Miriam
Tipo de recurso: artículo
Fecha de publicación:2024
País:España
Institución:Universidad Autónoma de Madrid
Repositorio:Biblos-e Archivo. Repositorio Institucional de la UAM
Idioma:inglés
OAI Identifier:oai:repositorio.uam.es:10486/718108
Acceso en línea:http://hdl.handle.net/10486/718108
https://dx.doi.org/10.1002/aelm.202400607
Access Level:acceso abierto
Palabra clave:MoS 2
2D Materials
Graphene Materials
Magnetic Field Screening
Magnetic Force Microscopy
Física
Descripción
Sumario:2D materials possess exceptional mechanical properties making them promising candidates for protecting nanostructures. However, the magnetic field screening properties of 2D materials are largely unexplored. Here it is used Magnetic Force Microscopy (MFM) to unveil the effects on the magnetic field of magnetic nanostructures when 2D materials are placed on top of them. It is demonstrated that while graphene exhibits a weak diamagnetic response due to its unique electronic structure around the Dirac point, the overall screening effect remains minimal (≈0.5% per layer). Conversely, graphene oxide (GO) and MoS2 show negligible response to the magnetic field, making them ideal for applications where preserving the original magnetic properties is crucial. These findings suggest that 2D materials can offer effective protection while minimally affecting the underlying magnetic functionalities, important for data storage technologies and spintronics