Sub-10 nm patterning of few-layer MoS2 and MoSe2 nanolectronic devices by oxidation scanning probe lithography
[EN] The properties of 2D materials devices are very sensitive to the physical, chemical and structural interactions that might happen during processing. Low-invasive patterning methods are required to fabricate devices at the nanoscale. Here we developed a process that combines oxidation scanning p...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2020 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:dnet:digitalcsic_::51aeaf7cdc71ac6459cbee8fafe8ada4 |
| Acceso en línea: | http://hdl.handle.net/10261/251630 |
| Access Level: | acceso abierto |
| Palabra clave: | Scanning probe lithography Few-layer molybdenum diselenide Few-layer molybdenum disulfide Nanoribbons Sub-10 nm Oxygen plasma |
| Sumario: | [EN] The properties of 2D materials devices are very sensitive to the physical, chemical and structural interactions that might happen during processing. Low-invasive patterning methods are required to fabricate devices at the nanoscale. Here we developed a process that combines oxidation scanning probe lithography (o-SPL) and oxygen plasma to fabricate nanoribbon field-effect transistors and nano-constrictions on few-layer MoS and MoSe. The oxygen plasma has a double role in this process. First, it forms a thin, uniform oxide layer on top of the flake surface to enable o-SPL nanopatterning with full control of shape and size. Second, the oxide layer thins down the flake. Both plasma-based and o-SPL oxides are soluble in deionized HO, which enabled etching and the definition of electrically isolated nano-constrictions and nanoribbons. The accuracy and robustness of the process was applied to pattern sub-10 nm wide constrictions and nanoribbon transistors. |
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