Field-free spin-orbit torque switching of synthetic antiferromagnet through interlayer Dzyaloshinskii-Moriya interactions

[EN]Perpendicular synthetic antiferromagnets (p-SAFs) are of interest for the next generation of ultrafast, high-density spintronic memory and logic devices. However, to efficiently operate their magnetic or- der by current-induced spin-orbit torques (SOTs), an unfavored high external magnetic field...

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Detalles Bibliográficos
Autores: Wang, Zilu, Li, Pingzhi, Fattouhi, Mouad, Yao, Yuxuan, Van Hees, Youri L.W., Schippers, Casper F., Zhang, Xueying, Lavrijsen, Reinoud, García Sánchez, Felipe, Martínez Vecino, Eduardo, Fert, Albert, Zhao, Weisheng, Koopmans, Bert
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2023
País:España
Institución:Universidad de Salamanca (USAL)
Repositorio:GREDOS. Repositorio Institucional de la Universidad de Salamanca
OAI Identifier:oai:gredos.usal.es:10366/153125
Acceso en línea:http://hdl.handle.net/10366/153125
Access Level:acceso abierto
Palabra clave:Magnetism
Computational physics
2202.08 Magnetismo
Descripción
Sumario:[EN]Perpendicular synthetic antiferromagnets (p-SAFs) are of interest for the next generation of ultrafast, high-density spintronic memory and logic devices. However, to efficiently operate their magnetic or- der by current-induced spin-orbit torques (SOTs), an unfavored high external magnetic field is conventionally required to break the sym- metry. Here, we report the field-free SOT switching of a p-SAF through the introduction of an interlayer with Dzyaloshinskii- Moriya interactions (DMIs). We experimentally observe the exis- tence of the DMI interlayer in our SAF sample by an azimuthal angular-dependent anomalous Hall measurement. Deterministic field-free switching is accomplished in such a sample and depicted by macrospin and micromagnetic simulations. The comparison be- tween the uniaxial interlayer DMI and the azimuthal direction- dependent switching behavior strongly suggests its origin from the DMI interlayer. We demonstrate the compatibility of the pro- posed strategy with magnetic tunnel junction device structure. Our results provide a strategy for p-SAF-based high-performance SOT devices.

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