Supplemental Material: Gate-tunable charge-spin interconversion in graphene/heavy-metal heterostructures

Supplemental information contain the following sections: 1) Formulation of the 3D FEM model 2) 3D geometry 3) Resistivity of graphene 4) Magnetization pulling 5) Spin precession in the pristine graphene 6) Spin precession in the proximitized graphene 7) Spin-charge interconversion in the proximitize...

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Detalles Bibliográficos
Autores: Chi, Zhendong, Dolan, Eoin, Yang, Haozhe, Martín-García, Beatriz, Gobbi, Marco, Hueso, Luis E., Casanova, Félix
Tipo de recurso: conjunto de datos
Fecha de publicación:2025
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/422916
Acceso en línea:http://hdl.handle.net/10261/422916
Access Level:acceso abierto
Descripción
Sumario:Supplemental information contain the following sections: 1) Formulation of the 3D FEM model 2) 3D geometry 3) Resistivity of graphene 4) Magnetization pulling 5) Spin precession in the pristine graphene 6) Spin precession in the proximitized graphene 7) Spin-charge interconversion in the proximitized graphene 8) Uncertainty analysis in 3D model 9) Reproducibility of results 10) Measuring CSI with out-of-plane field) 11) Measuring CSI at high temperature, 12) Comparison of charge-to-spin interconversion with spin-to-charge interconversion.

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