Topologically protected states in δ-doped junctions with band inversion
A topological boundary can be formed at the interface between a trivial and a topological insulator. The difference in the topological index across the junction leads to robust gapless surface states. Optical studies of these states are scarce in the literature, the reason being the difficulty in is...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2018 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/12266 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/12266 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Self-consistent analysis Inverted junctions Intersubband transitions Interface states Quantum-well Semiconductor Gaas Insulators Gap Heterojunctions Física de materiales Física del estado sólido 2211 Física del Estado Sólido |
| Sumario: | A topological boundary can be formed at the interface between a trivial and a topological insulator. The difference in the topological index across the junction leads to robust gapless surface states. Optical studies of these states are scarce in the literature, the reason being the difficulty in isolating their response from that of the bulk. In this work, we propose to deposit a δ layer of donor impurities in close proximity to a topological boundary to help in detecting gapless surface states. As we will show, gapless surface states are robust against this perturbation and they enhance intraband optical transitions as measured by the oscillator strength. These results help us to understand the interplay of surface and bulk states in topological insulators. |
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