Luminescence properties of transition-metal-doped GaSb

The luminescence properties of transition-metal (Cr, V, and Ru)-doped GaSb single crystals have been studied by a cathodoluminescence (CL) technique in a scanning electron microscope. Spatial segregation of impurities along the longitudinal direction of the crystals grown by the Bridgman method has...

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Detalles Bibliográficos
Autores: Hidalgo Alcalde, Pedro, Méndez Martín, María Bianchi, Dutta, P: S., Piqueras De Noriega, Francisco Javier, Dieguez, E.
Tipo de recurso: artículo
Fecha de publicación:1998
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/58950
Acceso en línea:https://hdl.handle.net/20.500.14352/58950
Access Level:acceso abierto
Palabra clave:538.9
Sb-Rich Solutions
Gallium Antimonide
Photoluminescence
Cathodoluminescence
Epitaxy
Física de materiales
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spelling Luminescence properties of transition-metal-doped GaSbHidalgo Alcalde, PedroMéndez Martín, María BianchiDutta, P: S.Piqueras De Noriega, Francisco JavierDieguez, E.538.9Sb-Rich SolutionsGallium AntimonidePhotoluminescenceCathodoluminescenceEpitaxyFísica de materialesThe luminescence properties of transition-metal (Cr, V, and Ru)-doped GaSb single crystals have been studied by a cathodoluminescence (CL) technique in a scanning electron microscope. Spatial segregation of impurities along the longitudinal direction of the crystals grown by the Bridgman method has been investigated. These dopants suppress the native acceptor concentration to varying extent. The behavior of Ru has been found to be different from the behavior of V and Cr. In particular the complete disappearance of the 777 meV (band A) emission has been observed in GaSb:Ru with a low doping level. A peak at 767 meV is also seen in this sample which, to the best of our knowledge, has not been previously observed in GaSb. The CL results have been complemented by x-ray-microanalysis measurements to ascertain the effect of doping level on the luminescence properties.American Physical SocietyUniversidad Complutense de Madrid19981998-03-1519981998-03-15journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/58950reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/589502026-06-02T12:44:21Z
dc.title.none.fl_str_mv Luminescence properties of transition-metal-doped GaSb
title Luminescence properties of transition-metal-doped GaSb
spellingShingle Luminescence properties of transition-metal-doped GaSb
Hidalgo Alcalde, Pedro
538.9
Sb-Rich Solutions
Gallium Antimonide
Photoluminescence
Cathodoluminescence
Epitaxy
Física de materiales
title_short Luminescence properties of transition-metal-doped GaSb
title_full Luminescence properties of transition-metal-doped GaSb
title_fullStr Luminescence properties of transition-metal-doped GaSb
title_full_unstemmed Luminescence properties of transition-metal-doped GaSb
title_sort Luminescence properties of transition-metal-doped GaSb
dc.creator.none.fl_str_mv Hidalgo Alcalde, Pedro
Méndez Martín, María Bianchi
Dutta, P: S.
Piqueras De Noriega, Francisco Javier
Dieguez, E.
author Hidalgo Alcalde, Pedro
author_facet Hidalgo Alcalde, Pedro
Méndez Martín, María Bianchi
Dutta, P: S.
Piqueras De Noriega, Francisco Javier
Dieguez, E.
author_role author
author2 Méndez Martín, María Bianchi
Dutta, P: S.
Piqueras De Noriega, Francisco Javier
Dieguez, E.
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Sb-Rich Solutions
Gallium Antimonide
Photoluminescence
Cathodoluminescence
Epitaxy
Física de materiales
topic 538.9
Sb-Rich Solutions
Gallium Antimonide
Photoluminescence
Cathodoluminescence
Epitaxy
Física de materiales
description The luminescence properties of transition-metal (Cr, V, and Ru)-doped GaSb single crystals have been studied by a cathodoluminescence (CL) technique in a scanning electron microscope. Spatial segregation of impurities along the longitudinal direction of the crystals grown by the Bridgman method has been investigated. These dopants suppress the native acceptor concentration to varying extent. The behavior of Ru has been found to be different from the behavior of V and Cr. In particular the complete disappearance of the 777 meV (band A) emission has been observed in GaSb:Ru with a low doping level. A peak at 767 meV is also seen in this sample which, to the best of our knowledge, has not been previously observed in GaSb. The CL results have been complemented by x-ray-microanalysis measurements to ascertain the effect of doping level on the luminescence properties.
publishDate 1998
dc.date.none.fl_str_mv 1998
1998-03-15
1998
1998-03-15
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/58950
url https://hdl.handle.net/20.500.14352/58950
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300719

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