Meucci, G., Olšteins, D., Carrad, D. J., Nagda, G., Beznasyuk, D. V., Petersen, C. E. N., . . . Jespersen, T. S. (2025). Cryogenic performance of field-effect transistors and amplifiers based on selective area grown InAs nanowires.
Citación estilo ChicagoMeucci, Giulia, Dāgs Olšteins, Damon J. Carrad, Gunjan Nagda, Daria V. Beznasyuk, Christian Emanuel N. Petersen, Sara Martí-Sànchez, Jordi Arbiol, y Thomas Sand Jespersen. Cryogenic Performance of Field-effect Transistors and Amplifiers Based On Selective Area Grown InAs Nanowires. 2025.
Cita MLAMeucci, Giulia, et al. Cryogenic Performance of Field-effect Transistors and Amplifiers Based On Selective Area Grown InAs Nanowires. 2025.
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