Majority carrier capture cross section determination in the large deep trap concentration cases

A method to determine the thermal cross section of a deep level from capacitance measurements is reported. The results enable us to explain the nonexponential behavior of the capacitance versus capture time when the trap concentration is not negligible with respect to that of the shallow one, and th...

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Detalles Bibliográficos
Autores: Morante i Lleonart, Joan Ramon, Samitier i Martí, Josep, Cornet i Calveras, Albert, Herms Berenguer, Atilà, Cartujo Estébanez, Pedro
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:1986
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/32215
Acceso en línea:https://hdl.handle.net/2445/32215
Access Level:acceso abierto
Palabra clave:Materials
Estructura electrònica
Matèria condensada
Electronic structure
Condensed matter
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spelling Majority carrier capture cross section determination in the large deep trap concentration casesMorante i Lleonart, Joan RamonSamitier i Martí, JosepCornet i Calveras, AlbertHerms Berenguer, AtilàCartujo Estébanez, PedroMaterialsEstructura electrònicaMatèria condensadaMaterialsElectronic structureCondensed matterA method to determine the thermal cross section of a deep level from capacitance measurements is reported. The results enable us to explain the nonexponential behavior of the capacitance versus capture time when the trap concentration is not negligible with respect to that of the shallow one, and the Debye tail effects are taken into account. A figure of merit for the nonexponential behavior of the capture process is shown and discussed for different situations of doping and applied bias. We have also considered the influence of the position of the trap level"s energy on the nonexponentiality of the capture transient. The experimental results are given for the gold acceptor level in silicon and for the DX center in Al0.55 Ga0.45As, which are in good agreement with the developed theory.American Institute of Physics2012201219862012info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion8 p.application/pdfhttps://hdl.handle.net/2445/32215Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésReproducció del document publicat a: http://dx.doi.org/10.1063/1.336465Journal of Applied Physics, 1986, vol. 59, num. 5, p. 1562-1569http://dx.doi.org/10.1063/1.336465(c) American Institute of Physics , 1986info:eu-repo/semantics/openAccessoai:recercat.cat:2445/322152026-05-29T05:05:01Z
dc.title.none.fl_str_mv Majority carrier capture cross section determination in the large deep trap concentration cases
title Majority carrier capture cross section determination in the large deep trap concentration cases
spellingShingle Majority carrier capture cross section determination in the large deep trap concentration cases
Morante i Lleonart, Joan Ramon
Materials
Estructura electrònica
Matèria condensada
Materials
Electronic structure
Condensed matter
title_short Majority carrier capture cross section determination in the large deep trap concentration cases
title_full Majority carrier capture cross section determination in the large deep trap concentration cases
title_fullStr Majority carrier capture cross section determination in the large deep trap concentration cases
title_full_unstemmed Majority carrier capture cross section determination in the large deep trap concentration cases
title_sort Majority carrier capture cross section determination in the large deep trap concentration cases
dc.creator.none.fl_str_mv Morante i Lleonart, Joan Ramon
Samitier i Martí, Josep
Cornet i Calveras, Albert
Herms Berenguer, Atilà
Cartujo Estébanez, Pedro
author Morante i Lleonart, Joan Ramon
author_facet Morante i Lleonart, Joan Ramon
Samitier i Martí, Josep
Cornet i Calveras, Albert
Herms Berenguer, Atilà
Cartujo Estébanez, Pedro
author_role author
author2 Samitier i Martí, Josep
Cornet i Calveras, Albert
Herms Berenguer, Atilà
Cartujo Estébanez, Pedro
author2_role author
author
author
author
dc.subject.none.fl_str_mv Materials
Estructura electrònica
Matèria condensada
Materials
Electronic structure
Condensed matter
topic Materials
Estructura electrònica
Matèria condensada
Materials
Electronic structure
Condensed matter
description A method to determine the thermal cross section of a deep level from capacitance measurements is reported. The results enable us to explain the nonexponential behavior of the capacitance versus capture time when the trap concentration is not negligible with respect to that of the shallow one, and the Debye tail effects are taken into account. A figure of merit for the nonexponential behavior of the capture process is shown and discussed for different situations of doping and applied bias. We have also considered the influence of the position of the trap level"s energy on the nonexponentiality of the capture transient. The experimental results are given for the gold acceptor level in silicon and for the DX center in Al0.55 Ga0.45As, which are in good agreement with the developed theory.
publishDate 1986
dc.date.none.fl_str_mv 1986
2012
2012
2012
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/32215
url https://hdl.handle.net/2445/32215
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://dx.doi.org/10.1063/1.336465
Journal of Applied Physics, 1986, vol. 59, num. 5, p. 1562-1569
http://dx.doi.org/10.1063/1.336465
dc.rights.none.fl_str_mv (c) American Institute of Physics , 1986
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) American Institute of Physics , 1986
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 8 p.
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,812429

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