Nanoscale Operando Characterization of Electrolyte-Gated Organic Field-Effect Transistors Reveals Charge Transport Bottlenecks

Charge transport in electrolyte-gated organic field-effect transistors (EGOFETs) is governed by the microstructural property of the semiconducting thin film that is in direct contact with the electrolyte. Therefore, a comprehensive nanoscale operando characterization of the active channel is crucial...

Descripción completa

Detalles Bibliográficos
Autores: Tanwar, Shubham, Millán Solsona, Rubén, Ruiz-Molina, Sara, Mas Torrent, Marta, Kyndiah, Adrica, Gomila Lluch, Gabriel
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2023
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/209845
Acceso en línea:https://hdl.handle.net/2445/209845
Access Level:acceso abierto
Palabra clave:Nanotecnologia
Materials nanoestructurats
Transistors
Nanotechnology
Nanostructured materials
id ES_d760eb8fcfb86a4f82b010069fb4431d
oai_identifier_str oai:diposit.ub.edu:2445/209845
network_acronym_str ES
network_name_str España
repository_id_str
spelling Nanoscale Operando Characterization of Electrolyte-Gated Organic Field-Effect Transistors Reveals Charge Transport BottlenecksTanwar, ShubhamMillán Solsona, RubénRuiz-Molina, SaraMas Torrent, MartaKyndiah, AdricaGomila Lluch, GabrielNanotecnologiaMaterials nanoestructuratsTransistorsNanotechnologyNanostructured materialsTransistorsCharge transport in electrolyte-gated organic field-effect transistors (EGOFETs) is governed by the microstructural property of the semiconducting thin film that is in direct contact with the electrolyte. Therefore, a comprehensive nanoscale operando characterization of the active channel is crucial to pinpoint various charge transport bottlenecks for rational and targeted optimization of the devices. Here, the local electrical properties of EGOFETs are systematically probed by in-liquid scanning dielectric microscopy (in-liquid SDM) and a direct picture of their functional mechanism at the nanoscale is provided across all operational regimes, starting from subthreshold, linear to saturation, until the onset of pinch-off. To this end, a robust interpretation framework of in-liquid SDM is introduced that enables quantitative local electric potential mapping directly from raw experimental data without requiring calibration or numerical simulations. Based on this development, a straightforward nanoscale assessment of various charge transport bottlenecks is performed, like contact access resistances, inter- and intradomain charge transport, microstructural inhomogeneities, and conduction anisotropy, which have been inaccessible earlier. Present results contribute to the fundamental understanding of charge transport in electrolyte-gated transistors and promote the development of direct structure–property–function relationships to guide future design rules.Wiley-VCH2023info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://hdl.handle.net/2445/209845Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésReproducció del document publicat a: https://doi.org/10.1002/adma.202309767Advanced Materials, 2023, vol. 36, num.13, p. 1-11https://doi.org/10.1002/adma.202309767cc by-nc-nd (c) Tanwar, Shubham et al., 2023info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/2098452026-05-27T06:46:51Z
dc.title.none.fl_str_mv Nanoscale Operando Characterization of Electrolyte-Gated Organic Field-Effect Transistors Reveals Charge Transport Bottlenecks
title Nanoscale Operando Characterization of Electrolyte-Gated Organic Field-Effect Transistors Reveals Charge Transport Bottlenecks
spellingShingle Nanoscale Operando Characterization of Electrolyte-Gated Organic Field-Effect Transistors Reveals Charge Transport Bottlenecks
Tanwar, Shubham
Nanotecnologia
Materials nanoestructurats
Transistors
Nanotechnology
Nanostructured materials
Transistors
title_short Nanoscale Operando Characterization of Electrolyte-Gated Organic Field-Effect Transistors Reveals Charge Transport Bottlenecks
title_full Nanoscale Operando Characterization of Electrolyte-Gated Organic Field-Effect Transistors Reveals Charge Transport Bottlenecks
title_fullStr Nanoscale Operando Characterization of Electrolyte-Gated Organic Field-Effect Transistors Reveals Charge Transport Bottlenecks
title_full_unstemmed Nanoscale Operando Characterization of Electrolyte-Gated Organic Field-Effect Transistors Reveals Charge Transport Bottlenecks
title_sort Nanoscale Operando Characterization of Electrolyte-Gated Organic Field-Effect Transistors Reveals Charge Transport Bottlenecks
dc.creator.none.fl_str_mv Tanwar, Shubham
Millán Solsona, Rubén
Ruiz-Molina, Sara
Mas Torrent, Marta
Kyndiah, Adrica
Gomila Lluch, Gabriel
author Tanwar, Shubham
author_facet Tanwar, Shubham
Millán Solsona, Rubén
Ruiz-Molina, Sara
Mas Torrent, Marta
Kyndiah, Adrica
Gomila Lluch, Gabriel
author_role author
author2 Millán Solsona, Rubén
Ruiz-Molina, Sara
Mas Torrent, Marta
Kyndiah, Adrica
Gomila Lluch, Gabriel
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Nanotecnologia
Materials nanoestructurats
Transistors
Nanotechnology
Nanostructured materials
Transistors
topic Nanotecnologia
Materials nanoestructurats
Transistors
Nanotechnology
Nanostructured materials
Transistors
description Charge transport in electrolyte-gated organic field-effect transistors (EGOFETs) is governed by the microstructural property of the semiconducting thin film that is in direct contact with the electrolyte. Therefore, a comprehensive nanoscale operando characterization of the active channel is crucial to pinpoint various charge transport bottlenecks for rational and targeted optimization of the devices. Here, the local electrical properties of EGOFETs are systematically probed by in-liquid scanning dielectric microscopy (in-liquid SDM) and a direct picture of their functional mechanism at the nanoscale is provided across all operational regimes, starting from subthreshold, linear to saturation, until the onset of pinch-off. To this end, a robust interpretation framework of in-liquid SDM is introduced that enables quantitative local electric potential mapping directly from raw experimental data without requiring calibration or numerical simulations. Based on this development, a straightforward nanoscale assessment of various charge transport bottlenecks is performed, like contact access resistances, inter- and intradomain charge transport, microstructural inhomogeneities, and conduction anisotropy, which have been inaccessible earlier. Present results contribute to the fundamental understanding of charge transport in electrolyte-gated transistors and promote the development of direct structure–property–function relationships to guide future design rules.
publishDate 2023
dc.date.none.fl_str_mv 2023
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/209845
url https://hdl.handle.net/2445/209845
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: https://doi.org/10.1002/adma.202309767
Advanced Materials, 2023, vol. 36, num.13, p. 1-11
https://doi.org/10.1002/adma.202309767
dc.rights.none.fl_str_mv cc by-nc-nd (c) Tanwar, Shubham et al., 2023
info:eu-repo/semantics/openAccess
rights_invalid_str_mv cc by-nc-nd (c) Tanwar, Shubham et al., 2023
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Wiley-VCH
publisher.none.fl_str_mv Wiley-VCH
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869420997301501952
score 15,300724

Similares en LA Referencia