Point defect engineering of high temperature piezoelectric BiScO3-PbTiO3 for enhanced voltage response
BiScO-PbTiO is the most promising system among high sensitivity piezoelectric BiMO-PbTiO perovskite solid solutions with high Curie temperature, which are under extensive investigation for expanding the operation temperature of state of the art Pb(Zr,Ti)O (PZT) up to 400 °C. The viability of these a...
| Autores: | , , , , |
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| Formato: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2016 |
| País: | España |
| Recursos: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/142797 |
| Acesso em linha: | http://hdl.handle.net/10261/142797 |
| Access Level: | acceso abierto |
| Palavra-chave: | Electroceramics Piezoelectricity Perovskites Point defects Morphotropic phase boundary |
| Resumo: | BiScO-PbTiO is the most promising system among high sensitivity piezoelectric BiMO-PbTiO perovskite solid solutions with high Curie temperature, which are under extensive investigation for expanding the operation temperature of state of the art Pb(Zr,Ti)O (PZT) up to 400 °C. The viability of these alternative materials requires the development of specific point defect engineering that allow a range of piezoelectric ceramics comparable to commercial PZTs to be obtained, optimized for the different applications. A distinctive feature of BiMO-PbTiO systems is the simultaneous presence of both Bi and Pb at the A-site of the perovskite. This enables the possibility of introducing charged point defects without incorporating new chemical species, just by defining an A-site non–stoichiometry. In this work, we present a comprehensive study of the effects of Bi substitution for Pb, along with the formulation of Pb vacancies for charge compensation. Results indicate an overall lattice stiffening that yields reduced polarizability and compliance, and dominates over a limited enhancement of the ferroelectric domain wall dynamics, so as a largely enhanced voltage response is obtained. Specifically, BiScO-PbTiO with the A-site non-stoichiometry is shown to be very suitable as the piezoelectric component of magnetoelectric composites for magnetic field sensing. |
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