Annealing behaviour of charge collection of neutron irradiated diodes from 8-inch p-type silicon wafers

ArXiv ePrint: 2503.01520

Detalles Bibliográficos
Autores: Kałuzińska, Oliwia Agnieszka, Diehl, Leena, Sicking, Eva, Mühlnikel, Marie Christin, Dias de Almeida, P., Kieseler, Jan, Kettner, Matthias, Walter, David, Defranchis, Matteo M.
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2025
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/398635
Acceso en línea:http://hdl.handle.net/10261/398635
Access Level:acceso abierto
Palabra clave:Calorimeters
Radiation damage to detector materials (solid state)
Radiation-hard detectors
Solid state detectors
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spelling Annealing behaviour of charge collection of neutron irradiated diodes from 8-inch p-type silicon wafersKałuzińska, Oliwia AgnieszkaDiehl, LeenaSicking, EvaMühlnikel, Marie ChristinDias de Almeida, P.Kieseler, JanKettner, MatthiasWalter, DavidDefranchis, Matteo M.CalorimetersRadiation damage to detector materials (solid state)Radiation-hard detectorsSolid state detectorsArXiv ePrint: 2503.01520To face the higher levels of radiation due to the 10-fold increase in integrated luminosity during the High-Luminosity LHC, the CMS detector will replace the current Calorimeter Endcap (CE) using the High-Granularity Calorimeter (HGCAL) concept. The electromagnetic section as well as the high-radiation regions of the hadronic section of the CE will be equipped with silicon pad sensors, covering a total area of 620 m2. Fluences up to 1.0·1016 neq/cm2 and doses up to 2 MGy are expected considering an integrated luminosity of 3 ab-1. The whole CE will normally operate at -35°C in order to mitigate the effects of radiation damage. The silicon sensors are processed on 8-inch p-type wafers with an active thickness of 300 μm, 200 μm and 120 μm and cut into hexagonal shapes for optimal use of the wafer area and tiling. With each main sensor several small sized test structures (e.g. pad diodes) are hosted on the wafers, used for quality assurance and radiation hardness tests. In order to investigate the radiation-induced bulk damage, 28 diodes have been irradiated with reactor neutrons at the TRIGA reactor in JSI (Jožef Stefan Institute, Ljubljana) to 13 fluences between 6.5·1014 neq/cm2 and 1.5·1016 neq/cm2. The charge collection of the irradiated silicon diodes was determined through transient current technique (TCT) measurements. The study focuses on the isothermal annealing behaviour of the bulk material at 60°C. The results have been used to extend the usage of thicker silicon sensors in regions expecting higher fluences and are being used to estimate the expected annealing effects of the silicon sensors during year-end technical stops and long HL-LHC shutdowns currently foreseen with a temperature around 0°C.This work has been sponsored by the Wolfgang Gentner Programme of the German Federal Ministry of Education and Research (grant no. 13E18CHA). This work has been supported by the Alexander-von-Humboldt-Stiftung.Peer reviewedIOP PublishingAlexander von Humboldt FoundationFederal Ministry of Education and Research (Germany)Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202520252025info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://hdl.handle.net/10261/398635reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttps://doi.org/10.1088/1748-0221/20/06/P06054Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3986352026-05-22T06:33:51Z
dc.title.none.fl_str_mv Annealing behaviour of charge collection of neutron irradiated diodes from 8-inch p-type silicon wafers
title Annealing behaviour of charge collection of neutron irradiated diodes from 8-inch p-type silicon wafers
spellingShingle Annealing behaviour of charge collection of neutron irradiated diodes from 8-inch p-type silicon wafers
Kałuzińska, Oliwia Agnieszka
Calorimeters
Radiation damage to detector materials (solid state)
Radiation-hard detectors
Solid state detectors
title_short Annealing behaviour of charge collection of neutron irradiated diodes from 8-inch p-type silicon wafers
title_full Annealing behaviour of charge collection of neutron irradiated diodes from 8-inch p-type silicon wafers
title_fullStr Annealing behaviour of charge collection of neutron irradiated diodes from 8-inch p-type silicon wafers
title_full_unstemmed Annealing behaviour of charge collection of neutron irradiated diodes from 8-inch p-type silicon wafers
title_sort Annealing behaviour of charge collection of neutron irradiated diodes from 8-inch p-type silicon wafers
dc.creator.none.fl_str_mv Kałuzińska, Oliwia Agnieszka
Diehl, Leena
Sicking, Eva
Mühlnikel, Marie Christin
Dias de Almeida, P.
Kieseler, Jan
Kettner, Matthias
Walter, David
Defranchis, Matteo M.
author Kałuzińska, Oliwia Agnieszka
author_facet Kałuzińska, Oliwia Agnieszka
Diehl, Leena
Sicking, Eva
Mühlnikel, Marie Christin
Dias de Almeida, P.
Kieseler, Jan
Kettner, Matthias
Walter, David
Defranchis, Matteo M.
author_role author
author2 Diehl, Leena
Sicking, Eva
Mühlnikel, Marie Christin
Dias de Almeida, P.
Kieseler, Jan
Kettner, Matthias
Walter, David
Defranchis, Matteo M.
author2_role author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Alexander von Humboldt Foundation
Federal Ministry of Education and Research (Germany)
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Calorimeters
Radiation damage to detector materials (solid state)
Radiation-hard detectors
Solid state detectors
topic Calorimeters
Radiation damage to detector materials (solid state)
Radiation-hard detectors
Solid state detectors
description ArXiv ePrint: 2503.01520
publishDate 2025
dc.date.none.fl_str_mv 2025
2025
2025
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/398635
url http://hdl.handle.net/10261/398635
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv https://doi.org/10.1088/1748-0221/20/06/P06054
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv IOP Publishing
publisher.none.fl_str_mv IOP Publishing
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,812429

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