Voltage controlled sub-THz detection with gated planar asymmetric nanochannels
[EN]This letter reports on room temperature sub-THz detection using self-switching diodes based on an AlGaN/GaN heterostructure on a Si substrate. By means of free-space measurements at 300 GHz, we demonstrate that the responsivity and noise equivalent power (NEP) of sub-THz detectors based on plana...
| Autores: | , , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2018 |
| País: | España |
| Institución: | Universidad de Salamanca (USAL) |
| Repositorio: | GREDOS. Repositorio Institucional de la Universidad de Salamanca |
| OAI Identifier: | oai:gredos.usal.es:10366/138148 |
| Acceso en línea: | http://hdl.handle.net/10366/138148 |
| Access Level: | acceso abierto |
| Palabra clave: | THz detectors GaN nanodiodes |
| Sumario: | [EN]This letter reports on room temperature sub-THz detection using self-switching diodes based on an AlGaN/GaN heterostructure on a Si substrate. By means of free-space measurements at 300 GHz, we demonstrate that the responsivity and noise equivalent power (NEP) of sub-THz detectors based on planar asymmetric nanochannels can be improved and voltage controlled by means of a top gate electrode. A simple quasi-static model based on the DC measurements of the current-voltage curves is able to predict the role of the gate bias in its performance. The best values of voltage responsivity and NEP are achieved when the gate bias approaches the threshold voltage, around 600 V/W and 50 pW/Hz1/2, respectively. A good agreement is found between modeled results and those obtained from RF measurements under probes at low frequency (900MHz) and in free-space at 300 GHz. |
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