Surface functionalization of surfactant-free particles

The broad implementation of thermoelectricity requires high-performance and low-cost materials. One possibility is employing surfactant-free solution synthesis to produce nanopowders. We propose the strategy of functionalizing "naked" particles' surface by inorganic molecules to contr...

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Detalhes bibliográficos
Autores: Chang, Cheng|||0000-0002-9515-4277, Liu, Yu|||0000-0001-7313-6740, Lee, Seung Ho, Spadaro, Maria Chiara|||0000-0002-6540-0377, Koskela, Kristopher M., Kleinhanns, Tobias, Costanzo, Tommaso, Arbiol i Cobos, Jordi|||0000-0002-0695-1726, Brutchey, Richard L., Ibáñez, Maria|||0000-0001-5013-2843
Tipo de documento: artigo
Data de publicação:2022
País:España
Recursos:Universitat Autònoma de Barcelona
Repositório:Dipòsit Digital de Documents de la UAB
Idioma:inglês
OAI Identifier:oai:ddd.uab.cat:266350
Acesso em linha:https://ddd.uab.cat/record/266350
https://dx.doi.org/urn:doi:10.1002/anie.202207002
Access Level:Acceso aberto
Palavra-chave:Thermoelectrics
SnTe
Grain boundary
Alkahest solutions
Surface functionalization
Descrição
Resumo:The broad implementation of thermoelectricity requires high-performance and low-cost materials. One possibility is employing surfactant-free solution synthesis to produce nanopowders. We propose the strategy of functionalizing "naked" particles' surface by inorganic molecules to control the nanostructure and, consequently, thermoelectric performance. In particular, we use bismuth thiolates to functionalize surfactant-free SnTe particles' surfaces. Upon thermal processing, bismuth thiolates decomposition renders SnTe-BiS nanocomposites with synergistic functions: 1) carrier concentration optimization by Bi doping; 2) Seebeck coefficient enhancement and bipolar effect suppression by energy filtering; and 3) lattice thermal conductivity reduction by small grain domains, grain boundaries and nanostructuration. Overall, the SnTe-BiS nanocomposites exhibit peak z T up to 1.3 at 873 K and an average z T of ≈0.6 at 300-873 K, which is among the highest reported for solution-processed SnTe.