Polymorphous Si thin films from radio frequency plasmas of SiH4 diluted in Ar: A study by transmission electron microscopy and Raman spectroscopy

In this study, we present a detailed structural characterization by means of transmission electron microscopy and Raman spectroscopy of polymorphous silicon (pm-Si:H) thin films deposited using radio-frequency dust-forming plasmas of SiH4 diluted in Ar. Square-wave modulation of the plasma and gas t...

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Detalles Bibliográficos
Autores: Viera Mármol, Gregorio, Huet, S., Bertrán Serra, Enric, Boufendi, L.
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2001
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/24793
Acceso en línea:https://hdl.handle.net/2445/24793
Access Level:acceso abierto
Palabra clave:Pel·lícules fines
Espectroscòpia Raman
Nanoestructures
Microelectrònica
Radiofreqüència
Optoelectrònica
Thin films
Raman spectroscopy
Nanostructures
Microelectronics
Radio frequency
Optoelectronics
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spelling Polymorphous Si thin films from radio frequency plasmas of SiH4 diluted in Ar: A study by transmission electron microscopy and Raman spectroscopyViera Mármol, GregorioHuet, S.Bertrán Serra, EnricBoufendi, L.Pel·lícules finesEspectroscòpia RamanNanoestructuresMicroelectrònicaRadiofreqüènciaOptoelectrònicaThin filmsRaman spectroscopyNanostructuresMicroelectronicsRadio frequencyOptoelectronicsIn this study, we present a detailed structural characterization by means of transmission electron microscopy and Raman spectroscopy of polymorphous silicon (pm-Si:H) thin films deposited using radio-frequency dust-forming plasmas of SiH4 diluted in Ar. Square-wave modulation of the plasma and gas temperature was varied to obtain films with different nanostructures. Transmission electron microscopy and electron diffraction have shown the presence of Si crystallites of around 2 nm in the pm-Si:H films, which are related to the nanoparticles formed in the plasma gas phase coming from their different growth stages, named particle nucleation and coagulation. Raman scattering has proved the role of the film nanostructure in the crystallization process induced ¿in situ¿ by laser heating.American Institute of Physics2001info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://hdl.handle.net/2445/24793Articles publicats en revistes (Física Aplicada)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésReproducció del document publicat a: http://dx.doi.org/10.1063/1.1398066Journal of Applied Physics, 2001, vol. 90, núm. 8, p. 4272-4280http://dx.doi.org/10.1063/1.1398066(c) American Institute of Physics, 2001info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/247932026-05-27T06:46:51Z
dc.title.none.fl_str_mv Polymorphous Si thin films from radio frequency plasmas of SiH4 diluted in Ar: A study by transmission electron microscopy and Raman spectroscopy
title Polymorphous Si thin films from radio frequency plasmas of SiH4 diluted in Ar: A study by transmission electron microscopy and Raman spectroscopy
spellingShingle Polymorphous Si thin films from radio frequency plasmas of SiH4 diluted in Ar: A study by transmission electron microscopy and Raman spectroscopy
Viera Mármol, Gregorio
Pel·lícules fines
Espectroscòpia Raman
Nanoestructures
Microelectrònica
Radiofreqüència
Optoelectrònica
Thin films
Raman spectroscopy
Nanostructures
Microelectronics
Radio frequency
Optoelectronics
title_short Polymorphous Si thin films from radio frequency plasmas of SiH4 diluted in Ar: A study by transmission electron microscopy and Raman spectroscopy
title_full Polymorphous Si thin films from radio frequency plasmas of SiH4 diluted in Ar: A study by transmission electron microscopy and Raman spectroscopy
title_fullStr Polymorphous Si thin films from radio frequency plasmas of SiH4 diluted in Ar: A study by transmission electron microscopy and Raman spectroscopy
title_full_unstemmed Polymorphous Si thin films from radio frequency plasmas of SiH4 diluted in Ar: A study by transmission electron microscopy and Raman spectroscopy
title_sort Polymorphous Si thin films from radio frequency plasmas of SiH4 diluted in Ar: A study by transmission electron microscopy and Raman spectroscopy
dc.creator.none.fl_str_mv Viera Mármol, Gregorio
Huet, S.
Bertrán Serra, Enric
Boufendi, L.
author Viera Mármol, Gregorio
author_facet Viera Mármol, Gregorio
Huet, S.
Bertrán Serra, Enric
Boufendi, L.
author_role author
author2 Huet, S.
Bertrán Serra, Enric
Boufendi, L.
author2_role author
author
author
dc.subject.none.fl_str_mv Pel·lícules fines
Espectroscòpia Raman
Nanoestructures
Microelectrònica
Radiofreqüència
Optoelectrònica
Thin films
Raman spectroscopy
Nanostructures
Microelectronics
Radio frequency
Optoelectronics
topic Pel·lícules fines
Espectroscòpia Raman
Nanoestructures
Microelectrònica
Radiofreqüència
Optoelectrònica
Thin films
Raman spectroscopy
Nanostructures
Microelectronics
Radio frequency
Optoelectronics
description In this study, we present a detailed structural characterization by means of transmission electron microscopy and Raman spectroscopy of polymorphous silicon (pm-Si:H) thin films deposited using radio-frequency dust-forming plasmas of SiH4 diluted in Ar. Square-wave modulation of the plasma and gas temperature was varied to obtain films with different nanostructures. Transmission electron microscopy and electron diffraction have shown the presence of Si crystallites of around 2 nm in the pm-Si:H films, which are related to the nanoparticles formed in the plasma gas phase coming from their different growth stages, named particle nucleation and coagulation. Raman scattering has proved the role of the film nanostructure in the crystallization process induced ¿in situ¿ by laser heating.
publishDate 2001
dc.date.none.fl_str_mv 2001
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/24793
url https://hdl.handle.net/2445/24793
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1398066
Journal of Applied Physics, 2001, vol. 90, núm. 8, p. 4272-4280
http://dx.doi.org/10.1063/1.1398066
dc.rights.none.fl_str_mv (c) American Institute of Physics, 2001
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) American Institute of Physics, 2001
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv Articles publicats en revistes (Física Aplicada)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869420547156213760
score 15,300719

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