Calorimetry of hydrogen desorption from ɑ-Si nanoparticles
The process of hydrogen desorption from amorphous silicon (ɑ-Si) nanoparticles grown by plasmaenhanced chemical vapor deposition (PECVD) has been analyzed by differential scanning calorimetry (DSC), mass spectrometry, and infrared spectroscopy, with the aim of quantifying the energy exchanged. Two e...
| Authors: | , , , , |
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| Format: | article |
| Status: | Published version |
| Publication Date: | 2002 |
| Country: | España |
| Institution: | Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| Repository: | Recercat. Dipósit de la Recerca de Catalunya |
| OAI Identifier: | oai:recercat.cat:10256/7696 |
| Online Access: | http://hdl.handle.net/10256/7696 |
| Access Level: | Open access |
| Keyword: | Ciència dels materials Materials science Semiconductors amorfs Amorphous semiconductors Capes fines Thin films Materials nanoestructurals Nanostructure materials |
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Calorimetry of hydrogen desorption from ɑ-Si nanoparticlesFarjas Silva, JordiDas, DebabrataFort, JoaquimRoura Grabulosa, PereBertrán Serra, EnricCiència dels materialsMaterials scienceSemiconductors amorfsAmorphous semiconductorsCapes finesThin filmsMaterials nanoestructuralsNanostructure materialsThe process of hydrogen desorption from amorphous silicon (ɑ-Si) nanoparticles grown by plasmaenhanced chemical vapor deposition (PECVD) has been analyzed by differential scanning calorimetry (DSC), mass spectrometry, and infrared spectroscopy, with the aim of quantifying the energy exchanged. Two exothermic peaks centered at 330 and 410 °C have been detected with energies per H atom of about 50 meV. This value has been compared with the results of theoretical calculations and is found to agree with the dissociation energy of Si-H groups of about 3.25 eV per H atom, provided that the formation energy per dangling bond in ɑ-Si is about 1.15 eV. It is shown that this result is valid for ɑ-Si:H films, tooAmerican Physical Society2002info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://hdl.handle.net/10256/7696http://hdl.handle.net/10256/7696© Physical Review B, 2002, vol. 65, num. 11, p. 115403-115407Articles publicats (D-F)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)Inglésinfo:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.65.115403info:eu-repo/semantics/altIdentifier/issn/1098-0121info:eu-repo/semantics/altIdentifier/eissn/1550-235XTots els drets reservatsinfo:eu-repo/semantics/openAccessoai:recercat.cat:10256/76962026-05-29T05:05:01Z |
| dc.title.none.fl_str_mv |
Calorimetry of hydrogen desorption from ɑ-Si nanoparticles |
| title |
Calorimetry of hydrogen desorption from ɑ-Si nanoparticles |
| spellingShingle |
Calorimetry of hydrogen desorption from ɑ-Si nanoparticles Farjas Silva, Jordi Ciència dels materials Materials science Semiconductors amorfs Amorphous semiconductors Capes fines Thin films Materials nanoestructurals Nanostructure materials |
| title_short |
Calorimetry of hydrogen desorption from ɑ-Si nanoparticles |
| title_full |
Calorimetry of hydrogen desorption from ɑ-Si nanoparticles |
| title_fullStr |
Calorimetry of hydrogen desorption from ɑ-Si nanoparticles |
| title_full_unstemmed |
Calorimetry of hydrogen desorption from ɑ-Si nanoparticles |
| title_sort |
Calorimetry of hydrogen desorption from ɑ-Si nanoparticles |
| dc.creator.none.fl_str_mv |
Farjas Silva, Jordi Das, Debabrata Fort, Joaquim Roura Grabulosa, Pere Bertrán Serra, Enric |
| author |
Farjas Silva, Jordi |
| author_facet |
Farjas Silva, Jordi Das, Debabrata Fort, Joaquim Roura Grabulosa, Pere Bertrán Serra, Enric |
| author_role |
author |
| author2 |
Das, Debabrata Fort, Joaquim Roura Grabulosa, Pere Bertrán Serra, Enric |
| author2_role |
author author author author |
| dc.subject.none.fl_str_mv |
Ciència dels materials Materials science Semiconductors amorfs Amorphous semiconductors Capes fines Thin films Materials nanoestructurals Nanostructure materials |
| topic |
Ciència dels materials Materials science Semiconductors amorfs Amorphous semiconductors Capes fines Thin films Materials nanoestructurals Nanostructure materials |
| description |
The process of hydrogen desorption from amorphous silicon (ɑ-Si) nanoparticles grown by plasmaenhanced chemical vapor deposition (PECVD) has been analyzed by differential scanning calorimetry (DSC), mass spectrometry, and infrared spectroscopy, with the aim of quantifying the energy exchanged. Two exothermic peaks centered at 330 and 410 °C have been detected with energies per H atom of about 50 meV. This value has been compared with the results of theoretical calculations and is found to agree with the dissociation energy of Si-H groups of about 3.25 eV per H atom, provided that the formation energy per dangling bond in ɑ-Si is about 1.15 eV. It is shown that this result is valid for ɑ-Si:H films, too |
| publishDate |
2002 |
| dc.date.none.fl_str_mv |
2002 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion |
| format |
article |
| status_str |
publishedVersion |
| dc.identifier.none.fl_str_mv |
http://hdl.handle.net/10256/7696 http://hdl.handle.net/10256/7696 |
| url |
http://hdl.handle.net/10256/7696 |
| dc.language.none.fl_str_mv |
Inglés |
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Inglés |
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info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.65.115403 info:eu-repo/semantics/altIdentifier/issn/1098-0121 info:eu-repo/semantics/altIdentifier/eissn/1550-235X |
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Tots els drets reservats info:eu-repo/semantics/openAccess |
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Tots els drets reservats |
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openAccess |
| dc.format.none.fl_str_mv |
application/pdf |
| dc.publisher.none.fl_str_mv |
American Physical Society |
| publisher.none.fl_str_mv |
American Physical Society |
| dc.source.none.fl_str_mv |
© Physical Review B, 2002, vol. 65, num. 11, p. 115403-115407 Articles publicats (D-F) reponame:Recercat. Dipósit de la Recerca de Catalunya instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
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Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
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Recercat. Dipósit de la Recerca de Catalunya |
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Recercat. Dipósit de la Recerca de Catalunya |
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1869420519330152448 |
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15,198674 |