Calorimetry of hydrogen desorption from ɑ-Si nanoparticles

The process of hydrogen desorption from amorphous silicon (ɑ-Si) nanoparticles grown by plasmaenhanced chemical vapor deposition (PECVD) has been analyzed by differential scanning calorimetry (DSC), mass spectrometry, and infrared spectroscopy, with the aim of quantifying the energy exchanged. Two e...

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Authors: Farjas Silva, Jordi, Das, Debabrata, Fort, Joaquim, Roura Grabulosa, Pere, Bertrán Serra, Enric
Format: article
Status:Published version
Publication Date:2002
Country:España
Institution:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repository:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:10256/7696
Online Access:http://hdl.handle.net/10256/7696
Access Level:Open access
Keyword:Ciència dels materials
Materials science
Semiconductors amorfs
Amorphous semiconductors
Capes fines
Thin films
Materials nanoestructurals
Nanostructure materials
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spelling Calorimetry of hydrogen desorption from ɑ-Si nanoparticlesFarjas Silva, JordiDas, DebabrataFort, JoaquimRoura Grabulosa, PereBertrán Serra, EnricCiència dels materialsMaterials scienceSemiconductors amorfsAmorphous semiconductorsCapes finesThin filmsMaterials nanoestructuralsNanostructure materialsThe process of hydrogen desorption from amorphous silicon (ɑ-Si) nanoparticles grown by plasmaenhanced chemical vapor deposition (PECVD) has been analyzed by differential scanning calorimetry (DSC), mass spectrometry, and infrared spectroscopy, with the aim of quantifying the energy exchanged. Two exothermic peaks centered at 330 and 410 °C have been detected with energies per H atom of about 50 meV. This value has been compared with the results of theoretical calculations and is found to agree with the dissociation energy of Si-H groups of about 3.25 eV per H atom, provided that the formation energy per dangling bond in ɑ-Si is about 1.15 eV. It is shown that this result is valid for ɑ-Si:H films, tooAmerican Physical Society2002info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://hdl.handle.net/10256/7696http://hdl.handle.net/10256/7696© Physical Review B, 2002, vol. 65, num. 11, p. 115403-115407Articles publicats (D-F)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)Inglésinfo:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.65.115403info:eu-repo/semantics/altIdentifier/issn/1098-0121info:eu-repo/semantics/altIdentifier/eissn/1550-235XTots els drets reservatsinfo:eu-repo/semantics/openAccessoai:recercat.cat:10256/76962026-05-29T05:05:01Z
dc.title.none.fl_str_mv Calorimetry of hydrogen desorption from ɑ-Si nanoparticles
title Calorimetry of hydrogen desorption from ɑ-Si nanoparticles
spellingShingle Calorimetry of hydrogen desorption from ɑ-Si nanoparticles
Farjas Silva, Jordi
Ciència dels materials
Materials science
Semiconductors amorfs
Amorphous semiconductors
Capes fines
Thin films
Materials nanoestructurals
Nanostructure materials
title_short Calorimetry of hydrogen desorption from ɑ-Si nanoparticles
title_full Calorimetry of hydrogen desorption from ɑ-Si nanoparticles
title_fullStr Calorimetry of hydrogen desorption from ɑ-Si nanoparticles
title_full_unstemmed Calorimetry of hydrogen desorption from ɑ-Si nanoparticles
title_sort Calorimetry of hydrogen desorption from ɑ-Si nanoparticles
dc.creator.none.fl_str_mv Farjas Silva, Jordi
Das, Debabrata
Fort, Joaquim
Roura Grabulosa, Pere
Bertrán Serra, Enric
author Farjas Silva, Jordi
author_facet Farjas Silva, Jordi
Das, Debabrata
Fort, Joaquim
Roura Grabulosa, Pere
Bertrán Serra, Enric
author_role author
author2 Das, Debabrata
Fort, Joaquim
Roura Grabulosa, Pere
Bertrán Serra, Enric
author2_role author
author
author
author
dc.subject.none.fl_str_mv Ciència dels materials
Materials science
Semiconductors amorfs
Amorphous semiconductors
Capes fines
Thin films
Materials nanoestructurals
Nanostructure materials
topic Ciència dels materials
Materials science
Semiconductors amorfs
Amorphous semiconductors
Capes fines
Thin films
Materials nanoestructurals
Nanostructure materials
description The process of hydrogen desorption from amorphous silicon (ɑ-Si) nanoparticles grown by plasmaenhanced chemical vapor deposition (PECVD) has been analyzed by differential scanning calorimetry (DSC), mass spectrometry, and infrared spectroscopy, with the aim of quantifying the energy exchanged. Two exothermic peaks centered at 330 and 410 °C have been detected with energies per H atom of about 50 meV. This value has been compared with the results of theoretical calculations and is found to agree with the dissociation energy of Si-H groups of about 3.25 eV per H atom, provided that the formation energy per dangling bond in ɑ-Si is about 1.15 eV. It is shown that this result is valid for ɑ-Si:H films, too
publishDate 2002
dc.date.none.fl_str_mv 2002
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10256/7696
http://hdl.handle.net/10256/7696
url http://hdl.handle.net/10256/7696
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.65.115403
info:eu-repo/semantics/altIdentifier/issn/1098-0121
info:eu-repo/semantics/altIdentifier/eissn/1550-235X
dc.rights.none.fl_str_mv Tots els drets reservats
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Tots els drets reservats
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv © Physical Review B, 2002, vol. 65, num. 11, p. 115403-115407
Articles publicats (D-F)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,198674