Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography

Cathodoluminescence (CL) microscopy and spectroscopy have been used to investigate the optical properties of GaN microstructures patterned by Ar+ ion irradiation and subsequent photoelectrochemical (PEC) etching. Monochromatic CL images and CL spectra reveal an enhancement of several defect-related...

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Authors: Díaz-Guerra Viejo, Carlos, Piqueras De Noriega, Francisco Javier, Volciuc, O., Popa, V., Tiginyanu, I. M.
Format: article
Publication Date:2006
Country:España
Institution:Universidad Complutense de Madrid (UCM)
Repository:Docta Complutense
Language:English
OAI Identifier:oai:docta.ucm.es:20.500.14352/51108
Online Access:https://hdl.handle.net/20.500.14352/51108
Access Level:Open access
Keyword:538.9
Molecular-Beam Epitaxy
Damage-Induced Masking
Vapor-Phase-Epitaxy
Luminescence Properties
Freestanding Gan
Photoluminescence
Defects
Gallium
Illumination
Transitions
Física de materiales
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oai_identifier_str oai:docta.ucm.es:20.500.14352/51108
network_acronym_str ES
network_name_str España
repository_id_str
spelling Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithographyDíaz-Guerra Viejo, CarlosPiqueras De Noriega, Francisco JavierVolciuc, O.Popa, V.Tiginyanu, I. M.538.9Molecular-Beam EpitaxyDamage-Induced MaskingVapor-Phase-EpitaxyLuminescence PropertiesFreestanding GanPhotoluminescenceDefectsGalliumIlluminationTransitionsFísica de materialesCathodoluminescence (CL) microscopy and spectroscopy have been used to investigate the optical properties of GaN microstructures patterned by Ar+ ion irradiation and subsequent photoelectrochemical (PEC) etching. Monochromatic CL images and CL spectra reveal an enhancement of several defect-related emission bands in a 10 mu m wide area around each microstructure. In addition, columnar nanostructures and nanoetch pits were found in the PEC etched areas. CL emission of the nanocolumns is dominated by free electron to acceptor transitions, while excitonic luminescence prevails in the rest of the etched GaN layers. Investigation of the sidewalls of the microstructures reveals that a CL emission band centered at about 3.41 eV, attributed to excitons bound to structural defects, is effectively suppressed after PEC etching only in the observed nanocolumns.American Institute of PhysicsUniversidad Complutense de Madrid20062006-07-1520062006-07-15journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/51108reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/511082026-06-02T12:44:21Z
dc.title.none.fl_str_mv Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography
title Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography
spellingShingle Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography
Díaz-Guerra Viejo, Carlos
538.9
Molecular-Beam Epitaxy
Damage-Induced Masking
Vapor-Phase-Epitaxy
Luminescence Properties
Freestanding Gan
Photoluminescence
Defects
Gallium
Illumination
Transitions
Física de materiales
title_short Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography
title_full Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography
title_fullStr Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography
title_full_unstemmed Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography
title_sort Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography
dc.creator.none.fl_str_mv Díaz-Guerra Viejo, Carlos
Piqueras De Noriega, Francisco Javier
Volciuc, O.
Popa, V.
Tiginyanu, I. M.
author Díaz-Guerra Viejo, Carlos
author_facet Díaz-Guerra Viejo, Carlos
Piqueras De Noriega, Francisco Javier
Volciuc, O.
Popa, V.
Tiginyanu, I. M.
author_role author
author2 Piqueras De Noriega, Francisco Javier
Volciuc, O.
Popa, V.
Tiginyanu, I. M.
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Molecular-Beam Epitaxy
Damage-Induced Masking
Vapor-Phase-Epitaxy
Luminescence Properties
Freestanding Gan
Photoluminescence
Defects
Gallium
Illumination
Transitions
Física de materiales
topic 538.9
Molecular-Beam Epitaxy
Damage-Induced Masking
Vapor-Phase-Epitaxy
Luminescence Properties
Freestanding Gan
Photoluminescence
Defects
Gallium
Illumination
Transitions
Física de materiales
description Cathodoluminescence (CL) microscopy and spectroscopy have been used to investigate the optical properties of GaN microstructures patterned by Ar+ ion irradiation and subsequent photoelectrochemical (PEC) etching. Monochromatic CL images and CL spectra reveal an enhancement of several defect-related emission bands in a 10 mu m wide area around each microstructure. In addition, columnar nanostructures and nanoetch pits were found in the PEC etched areas. CL emission of the nanocolumns is dominated by free electron to acceptor transitions, while excitonic luminescence prevails in the rest of the etched GaN layers. Investigation of the sidewalls of the microstructures reveals that a CL emission band centered at about 3.41 eV, attributed to excitons bound to structural defects, is effectively suppressed after PEC etching only in the observed nanocolumns.
publishDate 2006
dc.date.none.fl_str_mv 2006
2006-07-15
2006
2006-07-15
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/51108
url https://hdl.handle.net/20.500.14352/51108
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869420515039379456
score 15.301603

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