Resistive switching in Strontium iridate based thin films

We report on the local electrical properties, measured by conductive atomic force microscopy, of the Iridate-based Srn+1IrnO3n+1 family of thin films, in particular by comparing the n = 1, Sr2IrO4, and the n = ∞, SrIrO3, phases. We analyze the different resistive switching behavior as a function of...

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Detalles Bibliográficos
Autores: Fuentes, Víctor, Vasić, Borislav, Konstantinović, Z., Martínez Perea, Benjamín, Balcells, Lluis, Pomar, Alberto
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2020
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/230577
Acceso en línea:http://hdl.handle.net/10261/230577
Access Level:acceso abierto
Palabra clave:Resistive switching
Metal-insulator transitions
SrIrO3
Sr2IrO4
Conductive atomic force microscopy
Iridate thin films
id ES_d3ef208c78e0951b6a1d16dfd0060e18
oai_identifier_str oai:digital.csic.es:10261/230577
network_acronym_str ES
network_name_str España
repository_id_str
spelling Resistive switching in Strontium iridate based thin filmsFuentes, VíctorVasić, BorislavKonstantinović, Z.Martínez Perea, BenjamínBalcells, LluisPomar, AlbertoResistive switchingMetal-insulator transitionsSrIrO3Sr2IrO4Conductive atomic force microscopyIridate thin filmsWe report on the local electrical properties, measured by conductive atomic force microscopy, of the Iridate-based Srn+1IrnO3n+1 family of thin films, in particular by comparing the n = 1, Sr2IrO4, and the n = ∞, SrIrO3, phases. We analyze the different resistive switching behavior as a function of the pristine electronic properties of the films. We will show that, for films exhibiting insulating behavior, i.e., films of the n = 1 phase or films below 3 nm of thickness for the n = ∞ phase, hysteretic I–V curves with a sharp transition into a low resistance state (LRS), i.e. an abrupt increase of the current intensity, is detected above a well-defined threshold voltage. This suggests a resistive switching behavior associated to the jump between two resistance states that may be correlated to the activation energy, Δ, obtained by fitting the temperature dependence of the resistivity to a thermal activated Arrhenius law, ρ (T) ~ ρ0exp(−Δ/kBT). On the other hand, thicker samples of the n = ∞ phase exhibit a semimetallic character and I–V curves show progressive changes of the local resistance without a clearly defined threshold voltage. Kelvin Probe Force Microscopy based measurements confirmed that, concomitantly to the resistive switching, an evolution of the electronic states at the surface takes place that may be associated to the migration of oxygen vacancies promoted by the electrical fields under the AFM tip.We acknowledge financial support from the Spanish Ministry of Science, Innovation and Universities through Severo Ochoa Program (SEV-2015-04969), MAT2015-71664-R (HETEROCS) and RTI2018-099960-B-I00 (SPINCURIOX) and funding from the European Union’s Horizon 2020 research and innovation program under the Marie Sklodowska-Curie grant agreement No. 645658 (DAFNEOX Project) and FEDER Program. B.V. and Z.K. acknowledge the support of the Serbian Ministry of Education, Science and Technological Development (Projects No. OI171005 and III45018). A.P., V.F. and Z.K. thank Senzor-INFIZ (Serbia) for the cooperation provided during their respective secondments.Peer reviewedElsevierMinisterio de Ciencia, Innovación y Universidades (España)European CommissionMinistry of Education, Science and Technological Development (Serbia)Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202120212020info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Postprintinfo:eu-repo/semantics/acceptedVersionhttp://hdl.handle.net/10261/230577reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2015-0496info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/MAT2015-71664-Rinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/RTI2018-099960-B-I00info:eu-repo/grantAgreement/EC/H2020/645658http://dx.doi.org/10.1016/j.jmmm.2020.166419Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/2305772026-05-22T06:33:51Z
dc.title.none.fl_str_mv Resistive switching in Strontium iridate based thin films
title Resistive switching in Strontium iridate based thin films
spellingShingle Resistive switching in Strontium iridate based thin films
Fuentes, Víctor
Resistive switching
Metal-insulator transitions
SrIrO3
Sr2IrO4
Conductive atomic force microscopy
Iridate thin films
title_short Resistive switching in Strontium iridate based thin films
title_full Resistive switching in Strontium iridate based thin films
title_fullStr Resistive switching in Strontium iridate based thin films
title_full_unstemmed Resistive switching in Strontium iridate based thin films
title_sort Resistive switching in Strontium iridate based thin films
dc.creator.none.fl_str_mv Fuentes, Víctor
Vasić, Borislav
Konstantinović, Z.
Martínez Perea, Benjamín
Balcells, Lluis
Pomar, Alberto
author Fuentes, Víctor
author_facet Fuentes, Víctor
Vasić, Borislav
Konstantinović, Z.
Martínez Perea, Benjamín
Balcells, Lluis
Pomar, Alberto
author_role author
author2 Vasić, Borislav
Konstantinović, Z.
Martínez Perea, Benjamín
Balcells, Lluis
Pomar, Alberto
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Ministerio de Ciencia, Innovación y Universidades (España)
European Commission
Ministry of Education, Science and Technological Development (Serbia)
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Resistive switching
Metal-insulator transitions
SrIrO3
Sr2IrO4
Conductive atomic force microscopy
Iridate thin films
topic Resistive switching
Metal-insulator transitions
SrIrO3
Sr2IrO4
Conductive atomic force microscopy
Iridate thin films
description We report on the local electrical properties, measured by conductive atomic force microscopy, of the Iridate-based Srn+1IrnO3n+1 family of thin films, in particular by comparing the n = 1, Sr2IrO4, and the n = ∞, SrIrO3, phases. We analyze the different resistive switching behavior as a function of the pristine electronic properties of the films. We will show that, for films exhibiting insulating behavior, i.e., films of the n = 1 phase or films below 3 nm of thickness for the n = ∞ phase, hysteretic I–V curves with a sharp transition into a low resistance state (LRS), i.e. an abrupt increase of the current intensity, is detected above a well-defined threshold voltage. This suggests a resistive switching behavior associated to the jump between two resistance states that may be correlated to the activation energy, Δ, obtained by fitting the temperature dependence of the resistivity to a thermal activated Arrhenius law, ρ (T) ~ ρ0exp(−Δ/kBT). On the other hand, thicker samples of the n = ∞ phase exhibit a semimetallic character and I–V curves show progressive changes of the local resistance without a clearly defined threshold voltage. Kelvin Probe Force Microscopy based measurements confirmed that, concomitantly to the resistive switching, an evolution of the electronic states at the surface takes place that may be associated to the migration of oxygen vacancies promoted by the electrical fields under the AFM tip.
publishDate 2020
dc.date.none.fl_str_mv 2020
2021
2021
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Postprint
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/230577
url http://hdl.handle.net/10261/230577
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2015-0496
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/MAT2015-71664-R
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/RTI2018-099960-B-I00
info:eu-repo/grantAgreement/EC/H2020/645658
http://dx.doi.org/10.1016/j.jmmm.2020.166419
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869420502754263040
score 15,811543

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