Luminescence study of thermal treated and laser irradiated Bi_12GeO_20 and Bi_12SiO_20 crystals
Changes on the defect structure of Bi12GeO20 (BGO) and Bi12SiO20 (BSO) crystals induced by thermal treatments and laser irradiation have been studied by means of cathodoluminescence in the scanning electron microscope. The results have been compared to those previously reported for untreated and ele...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1998 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/58845 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/58845 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Bi_4Ge_3O_12 Cathodoluminescence Photoluminescence Interface Growth Física de materiales |
| Sumario: | Changes on the defect structure of Bi12GeO20 (BGO) and Bi12SiO20 (BSO) crystals induced by thermal treatments and laser irradiation have been studied by means of cathodoluminescence in the scanning electron microscope. The results have been compared to those previously reported for untreated and electron irradiated samples and recombination mechanisms responsible for some of the observed luminescence bands are discussed. Annealing of EGO samples causes the appearance of a new luminescence band at about 390 nm. The centers responsible for this band decorate the deformation slip bands in quenched EGO as observed in the cathodoluminescence images. The emission observed in BSO in the same spectral range is quenched during the annealing treatment. The annealing induced reduction of Bi ions to metallic Bi appears to be related to the quenching of a band at 640 nm observed in untreated samples. |
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