Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals
Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 1019 at./cm3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), and current-voltage behavior at room temperature. The resul...
| Autores: | , , , , , , , |
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| Formato: | artículo |
| Fecha de publicación: | 2009 |
| País: | España |
| Recursos: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/23646 |
| Acesso em linha: | http://hdl.handle.net/10261/23646 |
| Access Level: | acceso abierto |
| Palavra-chave: | Cadmium compounds Cathodoluminescence Crystal growth from melt Doping profiles Electrical resistivity II-VI semiconductors Indium Semiconductor doping Semiconductor growth Vacancies (crystal) X-ray chemical analysis Zinc compounds |
| Resumo: | Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 1019 at./cm3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), and current-voltage behavior at room temperature. The results shows that Cd and Te vacancy concentration depend on the indium and zinc concentrations. CL measurements indicate a relationship between radiative centers associated to Cd and Te vacancies and resistivity values. |
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