Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals

Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 1019 at./cm3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), and current-voltage behavior at room temperature. The resul...

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Autores: Rodríguez-Fernández, Jonathan, Carcelén, V., Hidalgo, P., Vijayan, N., Piqueras, J., Sochinskii, N. V., Pérez, J. M., Diéguez, E.
Tipo de recurso: artículo
Fecha de publicación:2009
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/23646
Acceso en línea:http://hdl.handle.net/10261/23646
Access Level:acceso abierto
Palabra clave:Cadmium compounds
Cathodoluminescence
Crystal growth from melt
Doping profiles
Electrical resistivity
II-VI semiconductors
Indium
Semiconductor doping
Semiconductor growth
Vacancies (crystal)
X-ray chemical analysis
Zinc compounds
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spelling Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystalsRodríguez-Fernández, JonathanCarcelén, V.Hidalgo, P.Vijayan, N.Piqueras, J.Sochinskii, N. V.Pérez, J. M.Diéguez, E.Cadmium compoundsCathodoluminescenceCrystal growth from meltDoping profilesElectrical resistivityII-VI semiconductorsIndiumSemiconductor dopingSemiconductor growthVacancies (crystal)X-ray chemical analysisZinc compoundsCadmium zinc telluride, CdZnTe, bulk single crystals doped with 1019 at./cm3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), and current-voltage behavior at room temperature. The results shows that Cd and Te vacancy concentration depend on the indium and zinc concentrations. CL measurements indicate a relationship between radiative centers associated to Cd and Te vacancies and resistivity values.This work was partially supported by the following Projects: Grant Nos. MEC-ESP2006-09935, CM-S-0505/MAT-079, and FP7-SEC-2007-01 “European Commision,” and Contract No. 14240/00/NL7SH “European Space Agency.” One of the authors, V.C., thanks MEC, Spain for financial support. N.V. is grateful to Department of Science and Technology, Government of India for providing the BOYSCAST fellowship. The author J.R.F. is thankful to the Universidad Autónoma of Madrid for the financial suppor.Peer reviewedAmerican Institute of PhysicsConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]201020102009info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501175615 bytesapplication/pdfhttp://hdl.handle.net/10261/23646reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttp://link.aip.orghttp://dx.doi.org/10.1063/1.3197031Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/236462026-05-22T06:33:51Z
dc.title.none.fl_str_mv Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals
title Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals
spellingShingle Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals
Rodríguez-Fernández, Jonathan
Cadmium compounds
Cathodoluminescence
Crystal growth from melt
Doping profiles
Electrical resistivity
II-VI semiconductors
Indium
Semiconductor doping
Semiconductor growth
Vacancies (crystal)
X-ray chemical analysis
Zinc compounds
title_short Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals
title_full Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals
title_fullStr Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals
title_full_unstemmed Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals
title_sort Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals
dc.creator.none.fl_str_mv Rodríguez-Fernández, Jonathan
Carcelén, V.
Hidalgo, P.
Vijayan, N.
Piqueras, J.
Sochinskii, N. V.
Pérez, J. M.
Diéguez, E.
author Rodríguez-Fernández, Jonathan
author_facet Rodríguez-Fernández, Jonathan
Carcelén, V.
Hidalgo, P.
Vijayan, N.
Piqueras, J.
Sochinskii, N. V.
Pérez, J. M.
Diéguez, E.
author_role author
author2 Carcelén, V.
Hidalgo, P.
Vijayan, N.
Piqueras, J.
Sochinskii, N. V.
Pérez, J. M.
Diéguez, E.
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Cadmium compounds
Cathodoluminescence
Crystal growth from melt
Doping profiles
Electrical resistivity
II-VI semiconductors
Indium
Semiconductor doping
Semiconductor growth
Vacancies (crystal)
X-ray chemical analysis
Zinc compounds
topic Cadmium compounds
Cathodoluminescence
Crystal growth from melt
Doping profiles
Electrical resistivity
II-VI semiconductors
Indium
Semiconductor doping
Semiconductor growth
Vacancies (crystal)
X-ray chemical analysis
Zinc compounds
description Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 1019 at./cm3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), and current-voltage behavior at room temperature. The results shows that Cd and Te vacancy concentration depend on the indium and zinc concentrations. CL measurements indicate a relationship between radiative centers associated to Cd and Te vacancies and resistivity values.
publishDate 2009
dc.date.none.fl_str_mv 2009
2010
2010
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/23646
url http://hdl.handle.net/10261/23646
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv http://link.aip.org
http://dx.doi.org/10.1063/1.3197031
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 175615 bytes
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.81155

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