Kinetic Control of Ultrafast Transient Liquid Assisted Growth of Solution-Derived YBa2Cu3O7-x Superconducting Films

Transient liquid assisted growth (TLAG) is an ultrafast non-equilibrium growth process mainly governed by kinetic parameters, which are only accessible through fast in situ characterizations. In situ synchrotron X-ray diffraction (XRD) analysis and in situ electrical resistivity measurements are use...

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Detalles Bibliográficos
Autores: Rasi, Silvia, Queraltó, Albert, Banchewski, Juri, Saltarelli, Lavinia, García Franco, Diana, Pacheco, Adrià, Gupta, Kapil, Kethamkuzhi, Aiswarya, Soler, Laia, Jareño Cerulla, Julia, Ricart, Susagna, Farjas, Jordi, Roura Grabulosa, Pere, Mocuta, Cristian, Obradors, Xavier, Puig Molina, Teresa
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2022
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/283501
Acceso en línea:http://hdl.handle.net/10261/283501
https://api.elsevier.com/content/abstract/scopus_id/85138194997
Access Level:acceso abierto
Palabra clave:Chemical solution deposition
Growth from transient liquid
Kinetic phase diagrams
Superconducting YBa2Cu3O7-x
Descripción
Sumario:Transient liquid assisted growth (TLAG) is an ultrafast non-equilibrium growth process mainly governed by kinetic parameters, which are only accessible through fast in situ characterizations. In situ synchrotron X-ray diffraction (XRD) analysis and in situ electrical resistivity measurements are used to derive kinetic diagrams of YBa2 Cu3 O7- x (YBCO) superconducting films prepared via TLAG and to reveal the unique peculiarities of the process. In particular, diagrams for the phase evolution and the YBCO growth rates have been built for the two TLAG routes. It is shown that TLAG transient liquids can be obtained upon the melting of two barium cuprate phases (and not just one), differentiated by their copper oxidation state. This knowledge serves as a guide to determine the processing conditions to reach high performance films at high growth rates. With proper control of these kinetic parameters, films with critical current densities of 2-2.6 MA cm-2 at 77 K and growth rates between 100-2000 nm s-1 are reached. These growth rates are 1.5-3 orders of magnitude higher than those of conventional methods.

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