Tuning the band gap of semiconducting carbon nanotube by an axial magnetic field
We have investigated the magnetic field dependence of transfer characteristics of a device fabricated in a configuration of a field-effect transistor with a conduction channel formed by a semiconducting multiwalled carbon nanotube. Our results unambiguously indicate that an axial magnetic field supp...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2010 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:115985 |
| Acceso en línea: | https://ddd.uab.cat/record/115985 https://dx.doi.org/urn:doi:10.1063/1.3360214 |
| Access Level: | acceso abierto |
| Palabra clave: | Carbon nanotubes Magnetic fields Band gap Band structure Electrodes Field effect transistors Semiconductor nanotubes Nanotube devices Semiconductor growth Activation energies |
| Sumario: | We have investigated the magnetic field dependence of transfer characteristics of a device fabricated in a configuration of a field-effect transistor with a conduction channel formed by a semiconducting multiwalled carbon nanotube. Our results unambiguously indicate that an axial magnetic field suppresses the band gap of the nanotube. Quantitative analysis of the data indicates linear dependence of the band gap on magnetic field as well as a linear splitting between the K and K' subbands of the band structure of the nanotube. |
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