Growth and physical properties of highly oriented La-doped (K,Na)NbO3 ferroelectric thin films
Lead-free (K,Na)NbO3 (KNN) and La doped (K,Na)NbO3 (KNN-La) thin films are grown on SrTiO3 substrates using the chemical solution deposition method. The effect of adding different amounts of Na and K excess (0-20 mol%) is investigated. The results confirm the necessity of adding 20 mol% excess amoun...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2015 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/28551 |
| Acceso en línea: | https://hdl.handle.net/2117/28551 https://dx.doi.org/10.1016/j.tsf.2015.01.038 |
| Access Level: | acceso abierto |
| Palabra clave: | Ferroelectric thin films Pyrolysis Ceramics Chemical solution deposition (K0.5Na0.5)NbO3 Ferroelectric Thin films Pyrolysis temperature Electrical-properties Ferroelectricitat Piròlisi Ceràmica Àrees temàtiques de la UPC::Física |
| Sumario: | Lead-free (K,Na)NbO3 (KNN) and La doped (K,Na)NbO3 (KNN-La) thin films are grown on SrTiO3 substrates using the chemical solution deposition method. The effect of adding different amounts of Na and K excess (0-20 mol%) is investigated. The results confirm the necessity of adding 20 mol% excess amounts of Na and K precursor solutions in order to avoid the formation of the secondary phase, K4Nb6O17, as confirmed by X-ray diffraction and Raman spectroscopy. Moreover, when adding a 20 mol% of alkaline metal excess, the thin films are highly textured with out-of-plane preferential orientation in the [100] direction of the [100] orientation of the substrate. Doping with lanthanum results in a decrease of the leakage current density at low electric field, and an increase in the dielectric permittivity across the whole temperature range (80-380 K). Although the (100)-oriented KNN and KNN-La films exhibited rounded hysteresis loops, at low temperatures the films show the typical ferroelectric hysteresis loops. (C) 2015 Elsevier B.V. All rights reserved. |
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