Lattice model for kinetics and grain-size distribution in crystallization
We propose a simple, versatile, and fast computational model to understand the deviations from the well-known Kolmogorov-Johnson-Mehl-Avrami kinetic theory found in metal recrystallization and amorphous semiconductor crystallization. Our model describes in detail the kinetics of the transformation a...
| Autores: | , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 2000 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59356 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/59356 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Avrami Kinetics Growth Nucleation Recrystallization Silicon Films Física de materiales |
| Sumario: | We propose a simple, versatile, and fast computational model to understand the deviations from the well-known Kolmogorov-Johnson-Mehl-Avrami kinetic theory found in metal recrystallization and amorphous semiconductor crystallization. Our model describes in detail the kinetics of the transformation and the grain size distribution of the product material, and is in good agreement with the available experimental data. Other morphological and kinetic features amenable of experimental observation are outlined, suggesting directions for further validation of the model. |
|---|