AlxIn1−xN on Si (100) Solar Cells (x = 0–0.56) Deposited by RF Sputtering

Valdueza-Felip, Sirona; Blasco, Rodrigo; Olea, Javier; Díaz-Lobo, Alba; Braña de Cal, Alejandro Francisco; Naranjo, Fernando B.

AlxIn1−xN on Si (100) Solar Cells (x = 0–0.56) Deposited by RF Sputtering

We investigate the photovoltaic performance of solar cells based on n-AlxIn1−xN (x = 0–0.56) on p-Si (100) hetero-junctions deposited by radio frequency sputtering. The AlxIn1−xN layers own an optical bandgap absorption edge tuneable from 1.73 eV to 2.56 eV within the Al content range. This increase...

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Detalles Bibliográficos
Autores:	Valdueza-Felip, Sirona, Blasco, Rodrigo, Olea, Javier, Díaz-Lobo, Alba, Braña de Cal, Alejandro Francisco, Naranjo, Fernando B.
Tipo de recurso:	artículo
Fecha de publicación:	2020
País:	España
Institución:	Universidad Autónoma de Madrid
Repositorio:	Biblos-e Archivo. Repositorio Institucional de la UAM
Idioma:	inglés
OAI Identifier:	oai:repositorio.uam.es:10486/696701
Acceso en línea:	http://hdl.handle.net/10486/696701 https://dx.doi.org/10.3390/ma13102336
Access Level:	acceso abierto
Palabra clave:	AlInN Silicon Solar cells Sputtering Física

id	ES_cec36b4ae49ff5f80a4c6d2c688bcd17
oai_identifier_str	oai:repositorio.uam.es:10486/696701
network_acronym_str	ES
network_name_str	España
repository_id_str
spelling	AlxIn1−xN on Si (100) Solar Cells (x = 0–0.56) Deposited by RF SputteringValdueza-Felip, SironaBlasco, RodrigoOlea, JavierDíaz-Lobo, AlbaBraña de Cal, Alejandro FranciscoNaranjo, Fernando B.AlInNSiliconSolar cellsSputteringFísicaWe investigate the photovoltaic performance of solar cells based on n-AlxIn1−xN (x = 0–0.56) on p-Si (100) hetero-junctions deposited by radio frequency sputtering. The AlxIn1−xN layers own an optical bandgap absorption edge tuneable from 1.73 eV to 2.56 eV within the Al content range. This increase of Al content results in more resistive layers (≈10−4–1 Ω·cm) while the residual carrier concentration drops from ~1021 to ~1019 cm−3 . As a result, the top n-contact resistance varies from ≈10−1 to 1 MΩ for InN to Al0.56In0.44N-based devices, respectively. Best results are obtained for devices with 28% Al that exhibit a broad external quantum efficiency covering the full solar spectrum with a maximum of 80% at 750 nm, an open-circuit voltage of 0.39 V, a short-circuit current density of 17.1 mA/cm2 and a conversion efficiency of 2.12% under air mass 1.5 global (AM1.5G) illumination (1 sun), rendering them promising for novel low-cost III-nitride on Si photovoltaic devices. For Al contents above 28%, the electrical performance of the structures lessens due to the high top-contact resistivityThis research was funded by the national projects from the Ministry of Research and Innovation TEC2017-84378-R and NERA (RTI2018-101037-B-I00); the projects from the Comunidad de Madrid SINFOTON2-CM (P2018/NMT-4326), MADRID-PV2 (P-2018/EMT-4308) and SOLA (CM/JIN/2019-013); the projects from the University of Alcalá ANIS (CCG2018/EXP-042) and PISA (CCG19/IA-005); and by the FEDER program. R. Blasco acknowledges the financial support of his contract associated with the Ramon y Cajal Fellowship RYC-2013-14084MDPIDepartamento de Física AplicadaFacultad de Ciencias20202020-05-19research articlehttp://purl.org/coar/resource_type/c_2df8fbb1VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10486/696701https://dx.doi.org/10.3390/ma13102336reponame:Biblos-e Archivo. Repositorio Institucional de la UAMinstname:Universidad Autónoma de MadridInglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:repositorio.uam.es:10486/6967012026-06-23T12:46:27Z
dc.title.none.fl_str_mv	AlxIn1−xN on Si (100) Solar Cells (x = 0–0.56) Deposited by RF Sputtering
title	AlxIn1−xN on Si (100) Solar Cells (x = 0–0.56) Deposited by RF Sputtering
spellingShingle	AlxIn1−xN on Si (100) Solar Cells (x = 0–0.56) Deposited by RF Sputtering Valdueza-Felip, Sirona AlInN Silicon Solar cells Sputtering Física
title_short	AlxIn1−xN on Si (100) Solar Cells (x = 0–0.56) Deposited by RF Sputtering
title_full	AlxIn1−xN on Si (100) Solar Cells (x = 0–0.56) Deposited by RF Sputtering
title_fullStr	AlxIn1−xN on Si (100) Solar Cells (x = 0–0.56) Deposited by RF Sputtering
title_full_unstemmed	AlxIn1−xN on Si (100) Solar Cells (x = 0–0.56) Deposited by RF Sputtering
title_sort	AlxIn1−xN on Si (100) Solar Cells (x = 0–0.56) Deposited by RF Sputtering
dc.creator.none.fl_str_mv	Valdueza-Felip, Sirona Blasco, Rodrigo Olea, Javier Díaz-Lobo, Alba Braña de Cal, Alejandro Francisco Naranjo, Fernando B.
author	Valdueza-Felip, Sirona
author_facet	Valdueza-Felip, Sirona Blasco, Rodrigo Olea, Javier Díaz-Lobo, Alba Braña de Cal, Alejandro Francisco Naranjo, Fernando B.
author_role	author
author2	Blasco, Rodrigo Olea, Javier Díaz-Lobo, Alba Braña de Cal, Alejandro Francisco Naranjo, Fernando B.
author2_role	author author author author author
dc.contributor.none.fl_str_mv	Departamento de Física Aplicada Facultad de Ciencias
dc.subject.none.fl_str_mv	AlInN Silicon Solar cells Sputtering Física
topic	AlInN Silicon Solar cells Sputtering Física
description	We investigate the photovoltaic performance of solar cells based on n-AlxIn1−xN (x = 0–0.56) on p-Si (100) hetero-junctions deposited by radio frequency sputtering. The AlxIn1−xN layers own an optical bandgap absorption edge tuneable from 1.73 eV to 2.56 eV within the Al content range. This increase of Al content results in more resistive layers (≈10−4–1 Ω·cm) while the residual carrier concentration drops from ~1021 to ~1019 cm−3 . As a result, the top n-contact resistance varies from ≈10−1 to 1 MΩ for InN to Al0.56In0.44N-based devices, respectively. Best results are obtained for devices with 28% Al that exhibit a broad external quantum efficiency covering the full solar spectrum with a maximum of 80% at 750 nm, an open-circuit voltage of 0.39 V, a short-circuit current density of 17.1 mA/cm2 and a conversion efficiency of 2.12% under air mass 1.5 global (AM1.5G) illumination (1 sun), rendering them promising for novel low-cost III-nitride on Si photovoltaic devices. For Al contents above 28%, the electrical performance of the structures lessens due to the high top-contact resistivity
publishDate	2020
dc.date.none.fl_str_mv	2020 2020-05-19
dc.type.none.fl_str_mv	research article http://purl.org/coar/resource_type/c_2df8fbb1 VoR http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv	info:eu-repo/semantics/article
format	article
dc.identifier.none.fl_str_mv	http://hdl.handle.net/10486/696701 https://dx.doi.org/10.3390/ma13102336
url	http://hdl.handle.net/10486/696701 https://dx.doi.org/10.3390/ma13102336
dc.language.none.fl_str_mv	Inglés eng
language_invalid_str_mv	Inglés
language	eng
dc.rights.none.fl_str_mv	open access http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv	info:eu-repo/semantics/openAccess
rights_invalid_str_mv	open access http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv	openAccess
dc.format.none.fl_str_mv	application/pdf
dc.publisher.none.fl_str_mv	MDPI
publisher.none.fl_str_mv	MDPI
dc.source.none.fl_str_mv	reponame:Biblos-e Archivo. Repositorio Institucional de la UAM instname:Universidad Autónoma de Madrid
instname_str	Universidad Autónoma de Madrid
reponame_str	Biblos-e Archivo. Repositorio Institucional de la UAM
collection	Biblos-e Archivo. Repositorio Institucional de la UAM
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_	1869420020697661440
score	15,300719

AlxIn1−xN on Si (100) Solar Cells (x = 0–0.56) Deposited by RF Sputtering

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