Noise and charge discreteness as ultimate limit for the THz operation of ultra-small electronic devices

[EN]To manufacture faster electron devices, the industry has entered into the nanoscale dimensions and Terahertz (THz) working frequencies. The discrete nature of the few electrons present simultaneously in the active region of ultra-small devices generate unavoidable fluctuations of the current at...

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Autores: Colomés, Enrique, Mateos López, Javier, González Sánchez, Tomás, Oriols, Xavier
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2020
País:España
Institución:Universidad de Salamanca (USAL)
Repositorio:GREDOS. Repositorio Institucional de la Universidad de Salamanca
OAI Identifier:oai:gredos.usal.es:10366/144050
Acceso en línea:http://hdl.handle.net/10366/144050
Access Level:acceso abierto
Palabra clave:Noise
THz
Nanodevices
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spelling Noise and charge discreteness as ultimate limit for the THz operation of ultra-small electronic devicesColomés, EnriqueMateos López, JavierGonzález Sánchez, TomásOriols, XavierNoiseTHzNanodevices[EN]To manufacture faster electron devices, the industry has entered into the nanoscale dimensions and Terahertz (THz) working frequencies. The discrete nature of the few electrons present simultaneously in the active region of ultra-small devices generate unavoidable fluctuations of the current at THz frequencies. The consequences of this noise remain unnoticed in the scientific community because its accurate understanding requires dealing with consecutive multi-time quantum measurements. Here, a modeling of the quantum measurement of the current at THz frequencies is introduced in terms of quantum (Bohmian) trajectories. With this new understanding, we develop an analytic model for THz noise as a function of the electron transit time and the sampling integration time, which finally determine the maximum device working frequency for digital applications. The model is confirmed by either semi-classical or full- quantum time-dependent Monte Carlo simulations. All these results show that intrinsic THz noise increases unlimitedly when the volume of the active region decreases. All attempts to minimize the low signal-to-noise ratio of these ultra-small devices to get effective THz working frequencies are incompatible with the basic elements of the scaling strategy. One can develop THz electron devices, but they cannot have ultra-small dimensions. Or, one can fabricate ultra-small electron devices, but they cannot be used for THz working frequencies.“Ministerio de Ciencia, Innovación y Universidades” under Grant No. RTI2018-097876-B-C21 (MCIU/AEI/FEDER, UE) and TEC2017-83910-R, the Consejería de Educación de la Junta de Castilla y León (project SA254P18), the Generalitat de Catalunya and FEDER for the project QUANTUMCAT 001-P-001644, the European Union’s Horizon 2020 research and innovation programme under grant agreement No Graphene Core2 785219 and under the Marie Skodowska-Curie grant agreement No 765426 (TeraApps).202020202020info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://hdl.handle.net/10366/144050reponame:GREDOS. Repositorio Institucional de la Universidad de Salamancainstname:Universidad de Salamanca (USAL)InglésRTI2018-097876-B-C21TEC2017-83910-RSA254P18001-P-001644Graphene Core2 785219Marie Skodowska-Curie grant agreement No 765426info:eu-repo/semantics/openAccessoai:gredos.usal.es:10366/1440502026-06-07T06:28:51Z
dc.title.none.fl_str_mv Noise and charge discreteness as ultimate limit for the THz operation of ultra-small electronic devices
title Noise and charge discreteness as ultimate limit for the THz operation of ultra-small electronic devices
spellingShingle Noise and charge discreteness as ultimate limit for the THz operation of ultra-small electronic devices
Colomés, Enrique
Noise
THz
Nanodevices
title_short Noise and charge discreteness as ultimate limit for the THz operation of ultra-small electronic devices
title_full Noise and charge discreteness as ultimate limit for the THz operation of ultra-small electronic devices
title_fullStr Noise and charge discreteness as ultimate limit for the THz operation of ultra-small electronic devices
title_full_unstemmed Noise and charge discreteness as ultimate limit for the THz operation of ultra-small electronic devices
title_sort Noise and charge discreteness as ultimate limit for the THz operation of ultra-small electronic devices
dc.creator.none.fl_str_mv Colomés, Enrique
Mateos López, Javier
González Sánchez, Tomás
Oriols, Xavier
author Colomés, Enrique
author_facet Colomés, Enrique
Mateos López, Javier
González Sánchez, Tomás
Oriols, Xavier
author_role author
author2 Mateos López, Javier
González Sánchez, Tomás
Oriols, Xavier
author2_role author
author
author
dc.subject.none.fl_str_mv Noise
THz
Nanodevices
topic Noise
THz
Nanodevices
description [EN]To manufacture faster electron devices, the industry has entered into the nanoscale dimensions and Terahertz (THz) working frequencies. The discrete nature of the few electrons present simultaneously in the active region of ultra-small devices generate unavoidable fluctuations of the current at THz frequencies. The consequences of this noise remain unnoticed in the scientific community because its accurate understanding requires dealing with consecutive multi-time quantum measurements. Here, a modeling of the quantum measurement of the current at THz frequencies is introduced in terms of quantum (Bohmian) trajectories. With this new understanding, we develop an analytic model for THz noise as a function of the electron transit time and the sampling integration time, which finally determine the maximum device working frequency for digital applications. The model is confirmed by either semi-classical or full- quantum time-dependent Monte Carlo simulations. All these results show that intrinsic THz noise increases unlimitedly when the volume of the active region decreases. All attempts to minimize the low signal-to-noise ratio of these ultra-small devices to get effective THz working frequencies are incompatible with the basic elements of the scaling strategy. One can develop THz electron devices, but they cannot have ultra-small dimensions. Or, one can fabricate ultra-small electron devices, but they cannot be used for THz working frequencies.
publishDate 2020
dc.date.none.fl_str_mv 2020
2020
2020
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10366/144050
url http://hdl.handle.net/10366/144050
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv RTI2018-097876-B-C21
TEC2017-83910-R
SA254P18
001-P-001644
Graphene Core2 785219
Marie Skodowska-Curie grant agreement No 765426
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:GREDOS. Repositorio Institucional de la Universidad de Salamanca
instname:Universidad de Salamanca (USAL)
instname_str Universidad de Salamanca (USAL)
reponame_str GREDOS. Repositorio Institucional de la Universidad de Salamanca
collection GREDOS. Repositorio Institucional de la Universidad de Salamanca
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,301603

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