Switching Dynamics and Improved Efficiency of Free-Standing Antiferroelectric Capacitors

The switching dynamics of antiferroelectric lead zirconate (PbZrO) freestanding capacitors compared to their epitaxial counterparts is reported. Frequency dependence of hysteresis indicates that freestanding capacitors exhibit a lower dispersion of switching fields, lower residual polarization, and...

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Detalles Bibliográficos
Autores: Saeed, Umair|||0000-0001-7397-9123, Pesquera, David|||0000-0003-0681-3371, Liu, Ying|||0000-0002-1262-2590, Fina, Ignasi|||0000-0003-4182-6194, Ganguly, Saptam|||0000-0002-2090-6622, Santiso, José|||0000-0003-4274-2101, Padilla-Pantoja, Jessica|||0000-0002-7769-7753, Caicedo Roque, Jose Manuel|||0000-0002-5192-4989, Liao, Xiaozhou|||0000-0001-8565-1758, Catalan, Gustau|||0000-0003-0214-4828
Tipo de recurso: artículo
Fecha de publicación:2024
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:300772
Acceso en línea:https://ddd.uab.cat/record/300772
https://dx.doi.org/urn:doi:10.1002/aelm.202400102
Access Level:acceso abierto
Palabra clave:Antiferroelectrics
Freestanding membranes
Kolmogorov-Avrami-Ishibashi model
Rayleigh's coefficient
Williamson-Hall plot
Descripción
Sumario:The switching dynamics of antiferroelectric lead zirconate (PbZrO) freestanding capacitors compared to their epitaxial counterparts is reported. Frequency dependence of hysteresis indicates that freestanding capacitors exhibit a lower dispersion of switching fields, lower residual polarization, and faster switching response as compared to epitaxially-clamped capacitors. As a consequence, freestanding capacitor membranes exhibit better energy storage density and efficiency.

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