A CMOS Digital SiPM With Focal-Plane Light-Spot Statistics for DOI Computation

Silicon photomultipliers can be used to infer the depth-of-interaction (DOI) in scintillator crystals. DOI can help to improve the quality of the positron emission tomography images affected by the parallax error. This paper contemplates the computation of DOI based on the standard deviation of the...

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Autores: Vornicu, Ion, Bandi, Franco, Carmona-Galán, R., Rodríguez-Vázquez, Ángel
Formato: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2017
País:España
Recursos:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/147763
Acesso em linha:http://hdl.handle.net/10261/147763
Access Level:acceso abierto
Palavra-chave:Single photon avalanche diode (SPAD)
Digital silicon photomultiplier (d-SiPM)
Time-of-flight (ToF)
Focal-plane processing
Scintillation light spot dispersion
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spelling A CMOS Digital SiPM With Focal-Plane Light-Spot Statistics for DOI ComputationVornicu, IonBandi, FrancoCarmona-Galán, R.Rodríguez-Vázquez, ÁngelSingle photon avalanche diode (SPAD)Digital silicon photomultiplier (d-SiPM)Time-of-flight (ToF)Focal-plane processingScintillation light spot dispersionSilicon photomultipliers can be used to infer the depth-of-interaction (DOI) in scintillator crystals. DOI can help to improve the quality of the positron emission tomography images affected by the parallax error. This paper contemplates the computation of DOI based on the standard deviation of the light distribution. The simulations have been carried out by GAMOS. The design of the proposed digital silicon photomultiplier (d-SiPM) with focal plane detection of the center of mass position and dispersion of the scintillation light is presented. The d-SiPM shares the same off-chip time-to-digital converter such that each pixel can be individually connected to it. A miniature d-SiPM 8×8 single-photon avalanche-diode (SPAD) array has been fabricated as a proof of concept. The SPADs along each row and column are connected through an OR combination technique. It has 256×256μm2 without peripherals circuits and pads. The fill factor is about 11%. The average dark count rate of the mini d-SiPM is of 240 kHz. The average photon detection efficiency is 5% at 480 nm wavelength, room temperature, and 0.9 V excess voltage. The dynamic range is of 96 dB. The sensor array features a time resolution of 212 ps. The photon-timing SNR is 81 dB. The focal plane statistics of the light-spot has been proved as well by measurements.Peer reviewedInstitute of Electrical and Electronics EngineersConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]201720172017info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Postprintinfo:eu-repo/semantics/acceptedVersionhttp://hdl.handle.net/10261/147763reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttps://doi.org/10.1109/JSEN.2016.2632200Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/1477632026-05-22T06:33:51Z
dc.title.none.fl_str_mv A CMOS Digital SiPM With Focal-Plane Light-Spot Statistics for DOI Computation
title A CMOS Digital SiPM With Focal-Plane Light-Spot Statistics for DOI Computation
spellingShingle A CMOS Digital SiPM With Focal-Plane Light-Spot Statistics for DOI Computation
Vornicu, Ion
Single photon avalanche diode (SPAD)
Digital silicon photomultiplier (d-SiPM)
Time-of-flight (ToF)
Focal-plane processing
Scintillation light spot dispersion
title_short A CMOS Digital SiPM With Focal-Plane Light-Spot Statistics for DOI Computation
title_full A CMOS Digital SiPM With Focal-Plane Light-Spot Statistics for DOI Computation
title_fullStr A CMOS Digital SiPM With Focal-Plane Light-Spot Statistics for DOI Computation
title_full_unstemmed A CMOS Digital SiPM With Focal-Plane Light-Spot Statistics for DOI Computation
title_sort A CMOS Digital SiPM With Focal-Plane Light-Spot Statistics for DOI Computation
dc.creator.none.fl_str_mv Vornicu, Ion
Bandi, Franco
Carmona-Galán, R.
Rodríguez-Vázquez, Ángel
author Vornicu, Ion
author_facet Vornicu, Ion
Bandi, Franco
Carmona-Galán, R.
Rodríguez-Vázquez, Ángel
author_role author
author2 Bandi, Franco
Carmona-Galán, R.
Rodríguez-Vázquez, Ángel
author2_role author
author
author
dc.contributor.none.fl_str_mv Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Single photon avalanche diode (SPAD)
Digital silicon photomultiplier (d-SiPM)
Time-of-flight (ToF)
Focal-plane processing
Scintillation light spot dispersion
topic Single photon avalanche diode (SPAD)
Digital silicon photomultiplier (d-SiPM)
Time-of-flight (ToF)
Focal-plane processing
Scintillation light spot dispersion
description Silicon photomultipliers can be used to infer the depth-of-interaction (DOI) in scintillator crystals. DOI can help to improve the quality of the positron emission tomography images affected by the parallax error. This paper contemplates the computation of DOI based on the standard deviation of the light distribution. The simulations have been carried out by GAMOS. The design of the proposed digital silicon photomultiplier (d-SiPM) with focal plane detection of the center of mass position and dispersion of the scintillation light is presented. The d-SiPM shares the same off-chip time-to-digital converter such that each pixel can be individually connected to it. A miniature d-SiPM 8×8 single-photon avalanche-diode (SPAD) array has been fabricated as a proof of concept. The SPADs along each row and column are connected through an OR combination technique. It has 256×256μm2 without peripherals circuits and pads. The fill factor is about 11%. The average dark count rate of the mini d-SiPM is of 240 kHz. The average photon detection efficiency is 5% at 480 nm wavelength, room temperature, and 0.9 V excess voltage. The dynamic range is of 96 dB. The sensor array features a time resolution of 212 ps. The photon-timing SNR is 81 dB. The focal plane statistics of the light-spot has been proved as well by measurements.
publishDate 2017
dc.date.none.fl_str_mv 2017
2017
2017
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Postprint
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/147763
url http://hdl.handle.net/10261/147763
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv https://doi.org/10.1109/JSEN.2016.2632200

dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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