Highly Absorbing Lead-Free Semiconductor Cu2AgBiI6 for Photovoltaic Applications from the Quaternary CuI-AgI-BiI3 Phase Space

[EN] Since the emergence of lead halide perovskites for photovoltaic research, there has been mounting effort in the search for alternative compounds with improved or complementary physical, chemical, or optoelectronic properties. Here, we report the discovery of Cu2AgBiI6: a stable, inorganic, lead...

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Autores: Sansom, Harry C., Wright, Adam D., Buizza, Leonardo R. V., Mahesh, Suhas, Wenger, Bernard, Zanella, Marco, Abdi-Jalebi, Mojtaba, Pitcher, Michael J., Dyer, Matthew S., Manning, Troy D., Friend, Richard H., Herz, Laura M., Snaith, Henry J., Claridge, John B., Rosseinsky, Matthew J., Longo, Giulia|||0000-0002-1163-1110
Tipo de recurso: artículo
Fecha de publicación:2021
País:España
Institución:Universitat Politècnica de València (UPV)
Repositorio:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
Idioma:inglés
OAI Identifier:oai:riunet.upv.es:10251/232901
Acceso en línea:https://riunet.upv.es/handle/10251/232901
Access Level:acceso abierto
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spelling Highly Absorbing Lead-Free Semiconductor Cu2AgBiI6 for Photovoltaic Applications from the Quaternary CuI-AgI-BiI3 Phase SpaceSansom, Harry C.Wright, Adam D.Buizza, Leonardo R. V.Mahesh, SuhasWenger, BernardZanella, MarcoAbdi-Jalebi, MojtabaPitcher, Michael J.Dyer, Matthew S.Manning, Troy D.Friend, Richard H.Herz, Laura M.Snaith, Henry J.Claridge, John B.Rosseinsky, Matthew J.Longo, Giulia|||0000-0002-1163-1110[EN] Since the emergence of lead halide perovskites for photovoltaic research, there has been mounting effort in the search for alternative compounds with improved or complementary physical, chemical, or optoelectronic properties. Here, we report the discovery of Cu2AgBiI6: a stable, inorganic, lead-free wide-band-gap semiconductor, well suited for use in lead-free tandem photovoltaics. We measure a very high absorption coefficient of 1.0 x 10(5) cm(-1) near the absorption onset, several times that of CH3NH3PbI3. Solution-processed Cu2AgBiI6 thin films show a direct band gap of 2.06(1) eV, an exciton binding energy of 25 meV, a substantial charge-carrier mobility (1.7 cm(2) V--(1) s(-)(1)), a long photoluminescence lifetime (33 ns), and a relatively small Stokes shift between absorption and emission. Crucially, we solve the structure of the first quaternary compound in the phase space among CuI, AgI and BiI3. The structure includes both tetrahedral and octahedral species which are open to compositional tuning and chemical substitution to further enhance properties. Since the proposed double-perovskite Cs2AgBiI6 thin films have not been synthesized to date, Cu-2 AgBiI6 is a valuable example of a stable Ag+/Bi3+ octahedral motif in a close-packed iodide sublattice that is accessed via the enhanced chemical diversity of the quaternary phase space.H.C.S. is thankful to the EPSRC for support under EP/N004884/1 and for a Ph.D. studentship at the University of Liverpool, and the EPSRC Prosperity Partnership EP/S004947/1 for current funding at the University of Oxford. G.L. acknowledges the EPSRC EP/M015254/2. A.D. W. acknowledges support from the EPSRC EP/P033229/1. L.R.V.B. acknowledges funding from the Oxford-Radcliffe Scholarship and the EPSRC Centre for Doctoral Training in New and Sustainable Photovoltaics. S. M. acknowledges funding from the Rhodes Trust (India & Worcester 2016). M.A.-J. acknowledges the Royal Society (RGS\R1\211068), Cambridge Materials Limited, and Wolfson College, University of Cambridge for their funding and technical support. This work used the Cirrus UK National Tier-2 HPC Service at EPCC (http://www.cirrus.ac.uk) funded by the University of Edinburgh and EPSRC (EP/P020267/1).American Chemical SocietyDepartamento de Física AplicadaInstituto de Diseño para la Fabricación y Producción AutomatizadaRoyal Society, Reino UnidoEngineering and Physical Sciences Research Council, Reino UnidoRepositorio Institucional de la Universitat Politècnica de València Riunet20212021-03-17journal articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://riunet.upv.es/handle/10251/232901reponame:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valénciainstname:Universitat Politècnica de València (UPV)InglésengEngineering and Physical Sciences Research Council, Reino Unido https://doi.org/10.13039/501100000266 EP%2FP033229%2F1Engineering and Physical Sciences Research Council, Reino Unido https://doi.org/10.13039/501100000266 EP%2FN004884%2F1Engineering and Physical Sciences Research Council, Reino Unido https://doi.org/10.13039/501100000266 EP%2FS004947%2F1Engineering and Physical Sciences Research Council, Reino Unido https://doi.org/10.13039/501100000266 EP%2FM015254%2F2Royal Society, Reino Unido Royal Society, Reino Unido RGS\R1\211068open accesshttp://purl.org/coar/access_right/c_abf2Reconocimiento (by)http://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccessoai:riunet.upv.es:10251/2329012026-06-13T07:49:27Z
dc.title.none.fl_str_mv Highly Absorbing Lead-Free Semiconductor Cu2AgBiI6 for Photovoltaic Applications from the Quaternary CuI-AgI-BiI3 Phase Space
title Highly Absorbing Lead-Free Semiconductor Cu2AgBiI6 for Photovoltaic Applications from the Quaternary CuI-AgI-BiI3 Phase Space
spellingShingle Highly Absorbing Lead-Free Semiconductor Cu2AgBiI6 for Photovoltaic Applications from the Quaternary CuI-AgI-BiI3 Phase Space
Sansom, Harry C.
title_short Highly Absorbing Lead-Free Semiconductor Cu2AgBiI6 for Photovoltaic Applications from the Quaternary CuI-AgI-BiI3 Phase Space
title_full Highly Absorbing Lead-Free Semiconductor Cu2AgBiI6 for Photovoltaic Applications from the Quaternary CuI-AgI-BiI3 Phase Space
title_fullStr Highly Absorbing Lead-Free Semiconductor Cu2AgBiI6 for Photovoltaic Applications from the Quaternary CuI-AgI-BiI3 Phase Space
title_full_unstemmed Highly Absorbing Lead-Free Semiconductor Cu2AgBiI6 for Photovoltaic Applications from the Quaternary CuI-AgI-BiI3 Phase Space
title_sort Highly Absorbing Lead-Free Semiconductor Cu2AgBiI6 for Photovoltaic Applications from the Quaternary CuI-AgI-BiI3 Phase Space
dc.creator.none.fl_str_mv Sansom, Harry C.
Wright, Adam D.
Buizza, Leonardo R. V.
Mahesh, Suhas
Wenger, Bernard
Zanella, Marco
Abdi-Jalebi, Mojtaba
Pitcher, Michael J.
Dyer, Matthew S.
Manning, Troy D.
Friend, Richard H.
Herz, Laura M.
Snaith, Henry J.
Claridge, John B.
Rosseinsky, Matthew J.
Longo, Giulia|||0000-0002-1163-1110
author Sansom, Harry C.
author_facet Sansom, Harry C.
Wright, Adam D.
Buizza, Leonardo R. V.
Mahesh, Suhas
Wenger, Bernard
Zanella, Marco
Abdi-Jalebi, Mojtaba
Pitcher, Michael J.
Dyer, Matthew S.
Manning, Troy D.
Friend, Richard H.
Herz, Laura M.
Snaith, Henry J.
Claridge, John B.
Rosseinsky, Matthew J.
Longo, Giulia|||0000-0002-1163-1110
author_role author
author2 Wright, Adam D.
Buizza, Leonardo R. V.
Mahesh, Suhas
Wenger, Bernard
Zanella, Marco
Abdi-Jalebi, Mojtaba
Pitcher, Michael J.
Dyer, Matthew S.
Manning, Troy D.
Friend, Richard H.
Herz, Laura M.
Snaith, Henry J.
Claridge, John B.
Rosseinsky, Matthew J.
Longo, Giulia|||0000-0002-1163-1110
author2_role author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Departamento de Física Aplicada
Instituto de Diseño para la Fabricación y Producción Automatizada
Royal Society, Reino Unido
Engineering and Physical Sciences Research Council, Reino Unido
Repositorio Institucional de la Universitat Politècnica de València Riunet
description [EN] Since the emergence of lead halide perovskites for photovoltaic research, there has been mounting effort in the search for alternative compounds with improved or complementary physical, chemical, or optoelectronic properties. Here, we report the discovery of Cu2AgBiI6: a stable, inorganic, lead-free wide-band-gap semiconductor, well suited for use in lead-free tandem photovoltaics. We measure a very high absorption coefficient of 1.0 x 10(5) cm(-1) near the absorption onset, several times that of CH3NH3PbI3. Solution-processed Cu2AgBiI6 thin films show a direct band gap of 2.06(1) eV, an exciton binding energy of 25 meV, a substantial charge-carrier mobility (1.7 cm(2) V--(1) s(-)(1)), a long photoluminescence lifetime (33 ns), and a relatively small Stokes shift between absorption and emission. Crucially, we solve the structure of the first quaternary compound in the phase space among CuI, AgI and BiI3. The structure includes both tetrahedral and octahedral species which are open to compositional tuning and chemical substitution to further enhance properties. Since the proposed double-perovskite Cs2AgBiI6 thin films have not been synthesized to date, Cu-2 AgBiI6 is a valuable example of a stable Ag+/Bi3+ octahedral motif in a close-packed iodide sublattice that is accessed via the enhanced chemical diversity of the quaternary phase space.
publishDate 2021
dc.date.none.fl_str_mv 2021
2021-03-17
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://riunet.upv.es/handle/10251/232901
url https://riunet.upv.es/handle/10251/232901
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Engineering and Physical Sciences Research Council, Reino Unido https://doi.org/10.13039/501100000266 EP%2FP033229%2F1
Engineering and Physical Sciences Research Council, Reino Unido https://doi.org/10.13039/501100000266 EP%2FN004884%2F1
Engineering and Physical Sciences Research Council, Reino Unido https://doi.org/10.13039/501100000266 EP%2FS004947%2F1
Engineering and Physical Sciences Research Council, Reino Unido https://doi.org/10.13039/501100000266 EP%2FM015254%2F2
Royal Society, Reino Unido Royal Society, Reino Unido RGS\R1\211068
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Reconocimiento (by)
http://creativecommons.org/licenses/by/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Reconocimiento (by)
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eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Chemical Society
publisher.none.fl_str_mv American Chemical Society
dc.source.none.fl_str_mv reponame:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname:Universitat Politècnica de València (UPV)
instname_str Universitat Politècnica de València (UPV)
reponame_str RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
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