Fast on-wafer electrical, mechanical, and electromechanical characterization of piezoresistive cantilever force sensors

Validation of a technological process requires an intensive characterization of the performance of the resulting devices, circuits or systems. The technology for the fabrication of Micro and Nanoelectromechanical systems is evolving rapidly, with new kind of device concepts for applications like sen...

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Detalles Bibliográficos
Autores: Tosolini, Giordano, Villanueva, L.G., Perez Murano, Francesc X., Bausells, Joan
Tipo de recurso: artículo
Fecha de publicación:2012
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/64465
Acceso en línea:http://hdl.handle.net/10261/64465
Access Level:acceso abierto
Palabra clave:Piezoresistive cantilever
On-wafer
Electromechanical
Force sensor
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spelling Fast on-wafer electrical, mechanical, and electromechanical characterization of piezoresistive cantilever force sensorsTosolini, GiordanoVillanueva, L.G.Perez Murano, Francesc X.Bausells, JoanPiezoresistive cantileverOn-waferElectromechanicalForce sensorValidation of a technological process requires an intensive characterization of the performance of the resulting devices, circuits or systems. The technology for the fabrication of Micro and Nanoelectromechanical systems is evolving rapidly, with new kind of device concepts for applications like sensing or harvesting are being proposed and demonstrated. However, the characterization tools and methods for these new devices are still nor fully developed. Here, we present an on-wafer, highly precise and rapid characterization method to measure the mechanical, electrical and electromechanical properties of piezoresistive cantilevers. The set-up is based on a combination of probe-card and atomic force microscopy (AFM) technology, it allows accessing many devices across a wafer and it can be applied to a broad range of MEMS and NEMS. Using this set-up we have characterized the performance of multiple submicron thick piezoresistive cantilever force sensors. For the best design we have obtained a force sensitivity RF=158 uV/nN, a noise of 5.8 uV (1Hz-1kHz) and a minimum detectable force (MDF) of 37 pN with a relative standard deviation of sigma=8%. This small value of sigma, together with a high fabrication yield >95%, validates our fabrication technology. The devices are intended to be used as bio-molecular detectors for the measurement of intermolecular forces between ligand and receptor molecule pairs.This work has been supported by MICINN through projects TEC2011-23600 and NANOSELECT-CSD2007- 00041 (Consolider-Ingenio 2010 Programme).Peer reviewedAmerican Institute of PhysicsConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]201320132012info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501http://hdl.handle.net/10261/64465reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttp://dx.doi.org/10.1063/1.3673603Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/644652026-05-22T06:33:51Z
dc.title.none.fl_str_mv Fast on-wafer electrical, mechanical, and electromechanical characterization of piezoresistive cantilever force sensors
title Fast on-wafer electrical, mechanical, and electromechanical characterization of piezoresistive cantilever force sensors
spellingShingle Fast on-wafer electrical, mechanical, and electromechanical characterization of piezoresistive cantilever force sensors
Tosolini, Giordano
Piezoresistive cantilever
On-wafer
Electromechanical
Force sensor
title_short Fast on-wafer electrical, mechanical, and electromechanical characterization of piezoresistive cantilever force sensors
title_full Fast on-wafer electrical, mechanical, and electromechanical characterization of piezoresistive cantilever force sensors
title_fullStr Fast on-wafer electrical, mechanical, and electromechanical characterization of piezoresistive cantilever force sensors
title_full_unstemmed Fast on-wafer electrical, mechanical, and electromechanical characterization of piezoresistive cantilever force sensors
title_sort Fast on-wafer electrical, mechanical, and electromechanical characterization of piezoresistive cantilever force sensors
dc.creator.none.fl_str_mv Tosolini, Giordano
Villanueva, L.G.
Perez Murano, Francesc X.
Bausells, Joan
author Tosolini, Giordano
author_facet Tosolini, Giordano
Villanueva, L.G.
Perez Murano, Francesc X.
Bausells, Joan
author_role author
author2 Villanueva, L.G.
Perez Murano, Francesc X.
Bausells, Joan
author2_role author
author
author
dc.contributor.none.fl_str_mv Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Piezoresistive cantilever
On-wafer
Electromechanical
Force sensor
topic Piezoresistive cantilever
On-wafer
Electromechanical
Force sensor
description Validation of a technological process requires an intensive characterization of the performance of the resulting devices, circuits or systems. The technology for the fabrication of Micro and Nanoelectromechanical systems is evolving rapidly, with new kind of device concepts for applications like sensing or harvesting are being proposed and demonstrated. However, the characterization tools and methods for these new devices are still nor fully developed. Here, we present an on-wafer, highly precise and rapid characterization method to measure the mechanical, electrical and electromechanical properties of piezoresistive cantilevers. The set-up is based on a combination of probe-card and atomic force microscopy (AFM) technology, it allows accessing many devices across a wafer and it can be applied to a broad range of MEMS and NEMS. Using this set-up we have characterized the performance of multiple submicron thick piezoresistive cantilever force sensors. For the best design we have obtained a force sensitivity RF=158 uV/nN, a noise of 5.8 uV (1Hz-1kHz) and a minimum detectable force (MDF) of 37 pN with a relative standard deviation of sigma=8%. This small value of sigma, together with a high fabrication yield >95%, validates our fabrication technology. The devices are intended to be used as bio-molecular detectors for the measurement of intermolecular forces between ligand and receptor molecule pairs.
publishDate 2012
dc.date.none.fl_str_mv 2012
2013
2013
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/64465
url http://hdl.handle.net/10261/64465
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv http://dx.doi.org/10.1063/1.3673603
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,81155

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