Anomalous resistivity at the structural phase transition of polycrystalline SnTe
An excess resistivity has been observed in thin film polycrystalline samples of SnTe with low carrier concentration and is attributed to the additional scattering due to the phonon softening associated with the structural phase transition.
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1979 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/65103 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/65103 |
| Access Level: | acceso abierto |
| Palabra clave: | 537 621.38 538.9 Resistivity Semiconductors SnTe Temperature dependence Electrónica (Física) Física de materiales |
| Sumario: | An excess resistivity has been observed in thin film polycrystalline samples of SnTe with low carrier concentration and is attributed to the additional scattering due to the phonon softening associated with the structural phase transition. |
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