Chemisorption of group-III metals on the Si(111) and Ge(111) surfaces: An ab initio study
Chemisorption of group-III metal adatoms on Si(111) and Ge(111) has been studied through the ab initio Hartree-Fock method including nonempirical pseudopotentials and using cluster models to simulate the surface. Three different high-symmetry sites (atop, eclipsed, and open) have been considered by...
| Autores: | , , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 1990 |
| País: | España |
| Institución: | Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| Repositorio: | Recercat. Dipósit de la Recerca de Catalunya |
| OAI Identifier: | oai:recercat.cat:2445/9771 |
| Acceso en línea: | https://hdl.handle.net/2445/9771 |
| Access Level: | acceso abierto |
| Palabra clave: | Química de superfícies Absorció Sòlids Semiconductors Teoria de l'aproximació Surface chemistry Approximation theory Absorption Solids |
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Chemisorption of group-III metals on the Si(111) and Ge(111) surfaces: An ab initio studyRicart, Josep M.Rubio Martínez, JaimeIllas i Riera, FrancescQuímica de superfíciesAbsorcióSòlidsSemiconductorsTeoria de l'aproximacióSurface chemistrySemiconductorsApproximation theoryAbsorptionSolidsChemisorption of group-III metal adatoms on Si(111) and Ge(111) has been studied through the ab initio Hartree-Fock method including nonempirical pseudopotentials and using cluster models to simulate the surface. Three different high-symmetry sites (atop, eclipsed, and open) have been considered by using X4H9, X4H7, and X6H9 (X=Si,Ge) cluster models. In a first step, ideal surface geometries have been used. Metal-induced reconstruction upon chemisorption has also been taken into account. Equilibrium distances, binding energies, and vibrational frequencies have been obtained and compared with available experimental data. From binding-energy considerations, the atop and eclipsed sites seem to be the most favorable ones and thus a coadsorption picture may be suggested. Group-III metals exhibit a similar behavior and the same is true for Si(111) and Ge(111) surfaces when chemisorption is considered.The American Physical Society200920091990info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion9 p.application/pdfhttps://hdl.handle.net/2445/9771Articles publicats en revistes (Ciència dels Materials i Química Física)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésReproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.42.5212Physical Review B, 1990, vol. 42, núm. 8, p. 5212-5220.http://dx.doi.org/10.1103/PhysRevB.42.5212(c) The American Physical Society, 1990info:eu-repo/semantics/openAccessoai:recercat.cat:2445/97712026-05-29T05:05:01Z |
| dc.title.none.fl_str_mv |
Chemisorption of group-III metals on the Si(111) and Ge(111) surfaces: An ab initio study |
| title |
Chemisorption of group-III metals on the Si(111) and Ge(111) surfaces: An ab initio study |
| spellingShingle |
Chemisorption of group-III metals on the Si(111) and Ge(111) surfaces: An ab initio study Ricart, Josep M. Química de superfícies Absorció Sòlids Semiconductors Teoria de l'aproximació Surface chemistry Semiconductors Approximation theory Absorption Solids |
| title_short |
Chemisorption of group-III metals on the Si(111) and Ge(111) surfaces: An ab initio study |
| title_full |
Chemisorption of group-III metals on the Si(111) and Ge(111) surfaces: An ab initio study |
| title_fullStr |
Chemisorption of group-III metals on the Si(111) and Ge(111) surfaces: An ab initio study |
| title_full_unstemmed |
Chemisorption of group-III metals on the Si(111) and Ge(111) surfaces: An ab initio study |
| title_sort |
Chemisorption of group-III metals on the Si(111) and Ge(111) surfaces: An ab initio study |
| dc.creator.none.fl_str_mv |
Ricart, Josep M. Rubio Martínez, Jaime Illas i Riera, Francesc |
| author |
Ricart, Josep M. |
| author_facet |
Ricart, Josep M. Rubio Martínez, Jaime Illas i Riera, Francesc |
| author_role |
author |
| author2 |
Rubio Martínez, Jaime Illas i Riera, Francesc |
| author2_role |
author author |
| dc.subject.none.fl_str_mv |
Química de superfícies Absorció Sòlids Semiconductors Teoria de l'aproximació Surface chemistry Semiconductors Approximation theory Absorption Solids |
| topic |
Química de superfícies Absorció Sòlids Semiconductors Teoria de l'aproximació Surface chemistry Semiconductors Approximation theory Absorption Solids |
| description |
Chemisorption of group-III metal adatoms on Si(111) and Ge(111) has been studied through the ab initio Hartree-Fock method including nonempirical pseudopotentials and using cluster models to simulate the surface. Three different high-symmetry sites (atop, eclipsed, and open) have been considered by using X4H9, X4H7, and X6H9 (X=Si,Ge) cluster models. In a first step, ideal surface geometries have been used. Metal-induced reconstruction upon chemisorption has also been taken into account. Equilibrium distances, binding energies, and vibrational frequencies have been obtained and compared with available experimental data. From binding-energy considerations, the atop and eclipsed sites seem to be the most favorable ones and thus a coadsorption picture may be suggested. Group-III metals exhibit a similar behavior and the same is true for Si(111) and Ge(111) surfaces when chemisorption is considered. |
| publishDate |
1990 |
| dc.date.none.fl_str_mv |
1990 2009 2009 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion |
| format |
article |
| status_str |
publishedVersion |
| dc.identifier.none.fl_str_mv |
https://hdl.handle.net/2445/9771 |
| url |
https://hdl.handle.net/2445/9771 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.42.5212 Physical Review B, 1990, vol. 42, núm. 8, p. 5212-5220. http://dx.doi.org/10.1103/PhysRevB.42.5212 |
| dc.rights.none.fl_str_mv |
(c) The American Physical Society, 1990 info:eu-repo/semantics/openAccess |
| rights_invalid_str_mv |
(c) The American Physical Society, 1990 |
| eu_rights_str_mv |
openAccess |
| dc.format.none.fl_str_mv |
9 p. application/pdf |
| dc.publisher.none.fl_str_mv |
The American Physical Society |
| publisher.none.fl_str_mv |
The American Physical Society |
| dc.source.none.fl_str_mv |
Articles publicats en revistes (Ciència dels Materials i Química Física) reponame:Recercat. Dipósit de la Recerca de Catalunya instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
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Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
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Recercat. Dipósit de la Recerca de Catalunya |
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Recercat. Dipósit de la Recerca de Catalunya |
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1869419373401210880 |
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15.812429 |