Thermal rectification and thermal logic gates in graded alloy semiconductors

Classical thermal rectification arises from the contact between two dissimilar bulk materials, each with a thermal conductivity (k) with a different temperature dependence. Here, we study thermal rectification in a SiGe alloy with a spatial dependence on the atomic composition. Rectification factors...

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Autores: Ng, Ryan C.|||0000-0002-0527-9130, Castro-Alvarez, Alejandro|||0000-0001-8360-8027, Sotomayor Torres, Clivia M.|||0000-0001-9986-2716, Chávez Ángel, Emigdio|||0000-0002-9783-0806
Tipo de recurso: artículo
Fecha de publicación:2022
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:266332
Acceso en línea:https://ddd.uab.cat/record/266332
https://dx.doi.org/urn:doi:10.3390/en15134685
Access Level:acceso abierto
Palabra clave:Thermal rectifier
Alloy
Rectification
Logic gate
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spelling Thermal rectification and thermal logic gates in graded alloy semiconductorsNg, Ryan C.|||0000-0002-0527-9130Castro-Alvarez, Alejandro|||0000-0001-8360-8027Sotomayor Torres, Clivia M.|||0000-0001-9986-2716Chávez Ángel, Emigdio|||0000-0002-9783-0806Thermal rectifierAlloyRectificationLogic gateClassical thermal rectification arises from the contact between two dissimilar bulk materials, each with a thermal conductivity (k) with a different temperature dependence. Here, we study thermal rectification in a SiGe alloy with a spatial dependence on the atomic composition. Rectification factors (R = k/k) of up to 3.41 were found. We also demonstrate the suitability of such an alloy for logic gates using a thermal AND gate as an example by controlling the thermal conductivity profile via the alloy composition. This system is readily extendable to other alloys, since it only depends on the effective thermal conductivity. These thermal devices are inherently advantageous alternatives to their electric counterparts, as they may be able to take advantage of otherwise undesired waste heat in the surroundings. Furthermore, the demonstration of logic operations is a step towards thermal computation. 22022-01-0120222022-01-01Articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/266332https://dx.doi.org/urn:doi:10.3390/en15134685reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengEuropean Commission https://doi.org/10.13039/501100000780 897148Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 PGC2018-101743-B-I00open accesshttp://purl.org/coar/access_right/c_abf2Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.https://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2663322026-06-06T12:50:31Z
dc.title.none.fl_str_mv Thermal rectification and thermal logic gates in graded alloy semiconductors
title Thermal rectification and thermal logic gates in graded alloy semiconductors
spellingShingle Thermal rectification and thermal logic gates in graded alloy semiconductors
Ng, Ryan C.|||0000-0002-0527-9130
Thermal rectifier
Alloy
Rectification
Logic gate
title_short Thermal rectification and thermal logic gates in graded alloy semiconductors
title_full Thermal rectification and thermal logic gates in graded alloy semiconductors
title_fullStr Thermal rectification and thermal logic gates in graded alloy semiconductors
title_full_unstemmed Thermal rectification and thermal logic gates in graded alloy semiconductors
title_sort Thermal rectification and thermal logic gates in graded alloy semiconductors
dc.creator.none.fl_str_mv Ng, Ryan C.|||0000-0002-0527-9130
Castro-Alvarez, Alejandro|||0000-0001-8360-8027
Sotomayor Torres, Clivia M.|||0000-0001-9986-2716
Chávez Ángel, Emigdio|||0000-0002-9783-0806
author Ng, Ryan C.|||0000-0002-0527-9130
author_facet Ng, Ryan C.|||0000-0002-0527-9130
Castro-Alvarez, Alejandro|||0000-0001-8360-8027
Sotomayor Torres, Clivia M.|||0000-0001-9986-2716
Chávez Ángel, Emigdio|||0000-0002-9783-0806
author_role author
author2 Castro-Alvarez, Alejandro|||0000-0001-8360-8027
Sotomayor Torres, Clivia M.|||0000-0001-9986-2716
Chávez Ángel, Emigdio|||0000-0002-9783-0806
author2_role author
author
author
dc.subject.none.fl_str_mv Thermal rectifier
Alloy
Rectification
Logic gate
topic Thermal rectifier
Alloy
Rectification
Logic gate
description Classical thermal rectification arises from the contact between two dissimilar bulk materials, each with a thermal conductivity (k) with a different temperature dependence. Here, we study thermal rectification in a SiGe alloy with a spatial dependence on the atomic composition. Rectification factors (R = k/k) of up to 3.41 were found. We also demonstrate the suitability of such an alloy for logic gates using a thermal AND gate as an example by controlling the thermal conductivity profile via the alloy composition. This system is readily extendable to other alloys, since it only depends on the effective thermal conductivity. These thermal devices are inherently advantageous alternatives to their electric counterparts, as they may be able to take advantage of otherwise undesired waste heat in the surroundings. Furthermore, the demonstration of logic operations is a step towards thermal computation.
publishDate 2022
dc.date.none.fl_str_mv 2
2022-01-01
2022
2022-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
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dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/266332
https://dx.doi.org/urn:doi:10.3390/en15134685
url https://ddd.uab.cat/record/266332
https://dx.doi.org/urn:doi:10.3390/en15134685
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv European Commission https://doi.org/10.13039/501100000780 897148
Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 PGC2018-101743-B-I00
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
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