Interfacial effects on the tunneling magnetoresistance in La_(0.7)Sr_(0.3)MnO_(3)/MgO/Fe tunneling junctions

We report on magnetotransport properties on La_(0.7)Sr_(0.3)MnO_(3)/MgO/Fe tunnel junctions grown epitaxially on top of (001)-oriented SrTiO_(3) substrates by sputtering. It is shown that the magnetoresistive response depends critically on the MgO/Fe interfacial properties. The appearance of an FeOX...

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Autores: Galceran, R., Balcells, Ll., Martínez-Boubeta, C., Bozzo, B., Cisneros-Fernández, J., Mata, M. de la, Magén, C., Arbiol, J., Tornos, J., Cuéllar Jiménez, Fabian Andrés, Sefrioui, Zouhair, Cebollada, A., Golmar, F., Huesos, L.E., Casanova, F., Santamaría Sánchez-Barriga, Jacobo, Martínez, B.
Tipo de documento: artigo
Data de publicação:2015
País:España
Recursos:Universidad Complutense de Madrid (UCM)
Repositório:Docta Complutense
Idioma:inglês
OAI Identifier:oai:docta.ucm.es:20.500.14352/24217
Acesso em linha:https://hdl.handle.net/20.500.14352/24217
Access Level:Acceso aberto
Palavra-chave:537
Spin polarization
Fe/MgO interface
Room-temperature
X-ray. Barrier
MgO
Oxide
Fe.
Electricidad
Electrónica (Física)
2202.03 Electricidad
id ES_c8a77a5cd8ec75c312a5e95c5b1c254a
oai_identifier_str oai:docta.ucm.es:20.500.14352/24217
network_acronym_str ES
network_name_str España
repository_id_str
spelling Interfacial effects on the tunneling magnetoresistance in La_(0.7)Sr_(0.3)MnO_(3)/MgO/Fe tunneling junctionsGalceran, R.Balcells, Ll.Martínez-Boubeta, C.Bozzo, B.Cisneros-Fernández, J.Mata, M. de laMagén, C.Arbiol, J.Tornos, J.Cuéllar Jiménez, Fabian AndrésSefrioui, ZouhairCebollada, A.Golmar, F.Huesos, L.E.Casanova, F.Santamaría Sánchez-Barriga, JacoboMartínez, B.537Spin polarizationFe/MgO interfaceRoom-temperatureX-ray. BarrierMgOOxideFe.ElectricidadElectrónica (Física)2202.03 ElectricidadWe report on magnetotransport properties on La_(0.7)Sr_(0.3)MnO_(3)/MgO/Fe tunnel junctions grown epitaxially on top of (001)-oriented SrTiO_(3) substrates by sputtering. It is shown that the magnetoresistive response depends critically on the MgO/Fe interfacial properties. The appearance of an FeOX layer by the interface destroys the 1 symmetry filtering effect of the MgO/Fe system and only a small negative tunneling magnetoresistance (TMR) (∼ −3 %) is measured. However, in annealed samples a switchover from positive TMR (∼ +25% at 70 K) to negative TMR (∼ −1 %) is observed around 120 K. This change is associated with the transition from semiconducting at high T to insulating at low T taking place at the Verwey transition (TV ∼ 120 K) in Fe3O4, thus suggesting the formation of a very thin slab of magnetite at the MgO/Fe interface during annealing treatments. These results highlight the relevance of interfacial properties on the tunneling conduction process and how it can be substantially modified through appropriate interface engineering.American Physical SocietyUniversidad Complutense de Madrid20152015-09-1620152015-09-16journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/24217reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/242172026-06-02T12:44:21Z
dc.title.none.fl_str_mv Interfacial effects on the tunneling magnetoresistance in La_(0.7)Sr_(0.3)MnO_(3)/MgO/Fe tunneling junctions
title Interfacial effects on the tunneling magnetoresistance in La_(0.7)Sr_(0.3)MnO_(3)/MgO/Fe tunneling junctions
spellingShingle Interfacial effects on the tunneling magnetoresistance in La_(0.7)Sr_(0.3)MnO_(3)/MgO/Fe tunneling junctions
Galceran, R.
537
Spin polarization
Fe/MgO interface
Room-temperature
X-ray. Barrier
MgO
Oxide
Fe.
Electricidad
Electrónica (Física)
2202.03 Electricidad
title_short Interfacial effects on the tunneling magnetoresistance in La_(0.7)Sr_(0.3)MnO_(3)/MgO/Fe tunneling junctions
title_full Interfacial effects on the tunneling magnetoresistance in La_(0.7)Sr_(0.3)MnO_(3)/MgO/Fe tunneling junctions
title_fullStr Interfacial effects on the tunneling magnetoresistance in La_(0.7)Sr_(0.3)MnO_(3)/MgO/Fe tunneling junctions
title_full_unstemmed Interfacial effects on the tunneling magnetoresistance in La_(0.7)Sr_(0.3)MnO_(3)/MgO/Fe tunneling junctions
title_sort Interfacial effects on the tunneling magnetoresistance in La_(0.7)Sr_(0.3)MnO_(3)/MgO/Fe tunneling junctions
dc.creator.none.fl_str_mv Galceran, R.
Balcells, Ll.
Martínez-Boubeta, C.
Bozzo, B.
Cisneros-Fernández, J.
Mata, M. de la
Magén, C.
Arbiol, J.
Tornos, J.
Cuéllar Jiménez, Fabian Andrés
Sefrioui, Zouhair
Cebollada, A.
Golmar, F.
Huesos, L.E.
Casanova, F.
Santamaría Sánchez-Barriga, Jacobo
Martínez, B.
author Galceran, R.
author_facet Galceran, R.
Balcells, Ll.
Martínez-Boubeta, C.
Bozzo, B.
Cisneros-Fernández, J.
Mata, M. de la
Magén, C.
Arbiol, J.
Tornos, J.
Cuéllar Jiménez, Fabian Andrés
Sefrioui, Zouhair
Cebollada, A.
Golmar, F.
Huesos, L.E.
Casanova, F.
Santamaría Sánchez-Barriga, Jacobo
Martínez, B.
author_role author
author2 Balcells, Ll.
Martínez-Boubeta, C.
Bozzo, B.
Cisneros-Fernández, J.
Mata, M. de la
Magén, C.
Arbiol, J.
Tornos, J.
Cuéllar Jiménez, Fabian Andrés
Sefrioui, Zouhair
Cebollada, A.
Golmar, F.
Huesos, L.E.
Casanova, F.
Santamaría Sánchez-Barriga, Jacobo
Martínez, B.
author2_role author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 537
Spin polarization
Fe/MgO interface
Room-temperature
X-ray. Barrier
MgO
Oxide
Fe.
Electricidad
Electrónica (Física)
2202.03 Electricidad
topic 537
Spin polarization
Fe/MgO interface
Room-temperature
X-ray. Barrier
MgO
Oxide
Fe.
Electricidad
Electrónica (Física)
2202.03 Electricidad
description We report on magnetotransport properties on La_(0.7)Sr_(0.3)MnO_(3)/MgO/Fe tunnel junctions grown epitaxially on top of (001)-oriented SrTiO_(3) substrates by sputtering. It is shown that the magnetoresistive response depends critically on the MgO/Fe interfacial properties. The appearance of an FeOX layer by the interface destroys the 1 symmetry filtering effect of the MgO/Fe system and only a small negative tunneling magnetoresistance (TMR) (∼ −3 %) is measured. However, in annealed samples a switchover from positive TMR (∼ +25% at 70 K) to negative TMR (∼ −1 %) is observed around 120 K. This change is associated with the transition from semiconducting at high T to insulating at low T taking place at the Verwey transition (TV ∼ 120 K) in Fe3O4, thus suggesting the formation of a very thin slab of magnetite at the MgO/Fe interface during annealing treatments. These results highlight the relevance of interfacial properties on the tunneling conduction process and how it can be substantially modified through appropriate interface engineering.
publishDate 2015
dc.date.none.fl_str_mv 2015
2015-09-16
2015
2015-09-16
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/24217
url https://hdl.handle.net/20.500.14352/24217
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869419304170029056
score 15,300719

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