Tecnología de fabricación de células solares con materiales candidatos a presentar banda intermedia
This work has been developed in a line of research related whit the Intermediate Band (IB) concept, which explores overcoming the photovoltaic efficiency limits established for solar cells. The IB concept implies two issues: a) the determination of materials capable to generate or create an IB b) th...
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| Tipo de recurso: | tesis doctoral |
| Estado: | Versión publicada |
| Fecha de publicación: | 2013 |
| País: | España |
| Institución: | CBUC, CESCA |
| Repositorio: | TDR. Tesis Doctorales en Red |
| OAI Identifier: | oai:www.tdx.cat:10803/130023 |
| Acceso en línea: | http://hdl.handle.net/10803/130023 https://dx.doi.org/10.5821/dissertation-2117-95149 |
| Access Level: | acceso abierto |
| Palabra clave: | 620 621.3 |
| Sumario: | This work has been developed in a line of research related whit the Intermediate Band (IB) concept, which explores overcoming the photovoltaic efficiency limits established for solar cells. The IB concept implies two issues: a) the determination of materials capable to generate or create an IB b) the incorporation of these materials optimally within the photovoltaic device. The first stage of this work is focused on the synthesis of GaAs layers with high doses of Titanium impurities (GaAs(Ti)) as IB candidate material. Thin layers of GaAs(Ti) have been deposited by sputtering and its optical and compositional characteristics have been characterized. In a second stage, structures and processes are designed to incorporate the GaAs(Ti) layers in photovoltaic devices. Moreover, devices with a HIT structure are fabricated using (p) c-Si substrates with high dose of implanted titanium. Other structures are developed to incorporate quantum dots and / or metallic nanoparticles. |
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