Cryogenic memory element based on an anomalous Josephson junction

We propose a nonvolatile memory element based on a lateral ferromagnetic Josephson junction with spin-orbit coupling and out-of-plane magnetization. The interplay between the latter and the intrinsic exchange field of the ferromagnet leads to a magnetoelectric effect that couples the charge current...

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Detalles Bibliográficos
Autores: Guarcello, Claudio, Bergeret, F. Sebastian
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2020
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/218351
Acceso en línea:http://hdl.handle.net/10261/218351
Access Level:acceso abierto
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spelling Cryogenic memory element based on an anomalous Josephson junctionGuarcello, ClaudioBergeret, F. SebastianWe propose a nonvolatile memory element based on a lateral ferromagnetic Josephson junction with spin-orbit coupling and out-of-plane magnetization. The interplay between the latter and the intrinsic exchange field of the ferromagnet leads to a magnetoelectric effect that couples the charge current through the junction and its magnetization, such that by applying a current pulse the direction of the magnetic moment in F can be switched. The two memory states are encoded in the direction of the out-of-plane magnetization. With the aim to determine the optimal working temperature for the memory element, we explore the noise-induced effects on the averaged stationary magnetization by taking into account thermal fluctuations affecting both the Josephson phase and the magnetic moment dynamics. We investigate the switching process as a function of intrinsic parameters of the ferromagnet, such as the Gilbert damping and strength of the spin-orbit coupling, and propose a nondestructive readout scheme based on a dc superconducting quantum interference device. Additionally, we analyze a way to protect the memory state from external perturbations by voltage gating in systems with a both linear-in-momentum Rashba and Dresselhaus spin-orbit coupling.This work is supported by the Horizon Research and Innovation Program under Grant Agreement No. 800923 (SUPERTED) and the Spanish Ministerio de Economía, Industria y Competitividad (MINEICO) under Project No. FIS2017-82804-P.Peer reviewedAmerican Physical SocietyEuropean CommissionAgencia Estatal de Investigación (España)Ministerio de Ciencia, Innovación y Universidades (España)Ministerio de Economía, Industria y Competitividad (España)Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202020202020info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/218351reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/FIS2017-82804-PFIS2017-82804-P/AEI/10.13039/501100011033info:eu-repo/grantAgreement/EC/H2020/800923https://doi.org/10.1103/PhysRevApplied.13.034012Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/2183512026-05-22T06:33:51Z
dc.title.none.fl_str_mv Cryogenic memory element based on an anomalous Josephson junction
title Cryogenic memory element based on an anomalous Josephson junction
spellingShingle Cryogenic memory element based on an anomalous Josephson junction
Guarcello, Claudio
title_short Cryogenic memory element based on an anomalous Josephson junction
title_full Cryogenic memory element based on an anomalous Josephson junction
title_fullStr Cryogenic memory element based on an anomalous Josephson junction
title_full_unstemmed Cryogenic memory element based on an anomalous Josephson junction
title_sort Cryogenic memory element based on an anomalous Josephson junction
dc.creator.none.fl_str_mv Guarcello, Claudio
Bergeret, F. Sebastian
author Guarcello, Claudio
author_facet Guarcello, Claudio
Bergeret, F. Sebastian
author_role author
author2 Bergeret, F. Sebastian
author2_role author
dc.contributor.none.fl_str_mv European Commission
Agencia Estatal de Investigación (España)
Ministerio de Ciencia, Innovación y Universidades (España)
Ministerio de Economía, Industria y Competitividad (España)
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
description We propose a nonvolatile memory element based on a lateral ferromagnetic Josephson junction with spin-orbit coupling and out-of-plane magnetization. The interplay between the latter and the intrinsic exchange field of the ferromagnet leads to a magnetoelectric effect that couples the charge current through the junction and its magnetization, such that by applying a current pulse the direction of the magnetic moment in F can be switched. The two memory states are encoded in the direction of the out-of-plane magnetization. With the aim to determine the optimal working temperature for the memory element, we explore the noise-induced effects on the averaged stationary magnetization by taking into account thermal fluctuations affecting both the Josephson phase and the magnetic moment dynamics. We investigate the switching process as a function of intrinsic parameters of the ferromagnet, such as the Gilbert damping and strength of the spin-orbit coupling, and propose a nondestructive readout scheme based on a dc superconducting quantum interference device. Additionally, we analyze a way to protect the memory state from external perturbations by voltage gating in systems with a both linear-in-momentum Rashba and Dresselhaus spin-orbit coupling.
publishDate 2020
dc.date.none.fl_str_mv 2020
2020
2020
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
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info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/218351
url http://hdl.handle.net/10261/218351
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
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#PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/FIS2017-82804-P
FIS2017-82804-P/AEI/10.13039/501100011033
info:eu-repo/grantAgreement/EC/H2020/800923
https://doi.org/10.1103/PhysRevApplied.13.034012

dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
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