Effects of interface states on the transport properties of all-oxide La_(0.8)Sr_(0.2)CoO_(3)/SrTi_(0.99)Nb_(0.01)O_(3) p-n heterojunctions

Electrical transport properties of heteroepitaxial p-n junctions made of La_(0.8)Sr_(0.2)CoO_(3) and SrTi_(0.99)Nb_(0.01)O_(3) were studied. Junctions display highly rectifying current-voltage characteristics over a wide temperature range (20–300 K). Two distinct transport mechanisms are identified:...

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Detalles Bibliográficos
Autores: Bruno, Flavio Yair, Garcia Barriocanal, Javier, Torija, M., Rivera Calzada, Alberto Carlos, Sefrioui, Zouhair, Leighton, C., León Yebra, Carlos, Santamaría Sánchez-Barriga, Jacobo
Tipo de recurso: artículo
Fecha de publicación:2008
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/51411
Acceso en línea:https://hdl.handle.net/20.500.14352/51411
Access Level:acceso abierto
Palabra clave:537
Physics
Applied.
Electricidad
Electrónica (Física)
2202.03 Electricidad
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repository_id_str
spelling Effects of interface states on the transport properties of all-oxide La_(0.8)Sr_(0.2)CoO_(3)/SrTi_(0.99)Nb_(0.01)O_(3) p-n heterojunctionsBruno, Flavio YairGarcia Barriocanal, JavierTorija, M.Rivera Calzada, Alberto CarlosSefrioui, ZouhairLeighton, C.León Yebra, CarlosSantamaría Sánchez-Barriga, Jacobo537PhysicsApplied.ElectricidadElectrónica (Física)2202.03 ElectricidadElectrical transport properties of heteroepitaxial p-n junctions made of La_(0.8)Sr_(0.2)CoO_(3) and SrTi_(0.99)Nb_(0.01)O_(3) were studied. Junctions display highly rectifying current-voltage characteristics over a wide temperature range (20–300 K). Two distinct transport mechanisms are identified: tunneling assisted by interface states at T<130 K and diffusion/recombination at higher temperatures. Capacitance-voltage characteristics are used to determine the junction built-in potential at different frequencies. A capacitance relaxation is found due to charge trapping at interface states. Interface states, which deeply affect transport, are discussed in connection to charge-transfer processes related to the polarity mismatch at the interface.American Institute of PhysicsUniversidad Complutense de Madrid20082008-02-2520082008-02-25journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/51411reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/514112026-06-02T12:44:21Z
dc.title.none.fl_str_mv Effects of interface states on the transport properties of all-oxide La_(0.8)Sr_(0.2)CoO_(3)/SrTi_(0.99)Nb_(0.01)O_(3) p-n heterojunctions
title Effects of interface states on the transport properties of all-oxide La_(0.8)Sr_(0.2)CoO_(3)/SrTi_(0.99)Nb_(0.01)O_(3) p-n heterojunctions
spellingShingle Effects of interface states on the transport properties of all-oxide La_(0.8)Sr_(0.2)CoO_(3)/SrTi_(0.99)Nb_(0.01)O_(3) p-n heterojunctions
Bruno, Flavio Yair
537
Physics
Applied.
Electricidad
Electrónica (Física)
2202.03 Electricidad
title_short Effects of interface states on the transport properties of all-oxide La_(0.8)Sr_(0.2)CoO_(3)/SrTi_(0.99)Nb_(0.01)O_(3) p-n heterojunctions
title_full Effects of interface states on the transport properties of all-oxide La_(0.8)Sr_(0.2)CoO_(3)/SrTi_(0.99)Nb_(0.01)O_(3) p-n heterojunctions
title_fullStr Effects of interface states on the transport properties of all-oxide La_(0.8)Sr_(0.2)CoO_(3)/SrTi_(0.99)Nb_(0.01)O_(3) p-n heterojunctions
title_full_unstemmed Effects of interface states on the transport properties of all-oxide La_(0.8)Sr_(0.2)CoO_(3)/SrTi_(0.99)Nb_(0.01)O_(3) p-n heterojunctions
title_sort Effects of interface states on the transport properties of all-oxide La_(0.8)Sr_(0.2)CoO_(3)/SrTi_(0.99)Nb_(0.01)O_(3) p-n heterojunctions
dc.creator.none.fl_str_mv Bruno, Flavio Yair
Garcia Barriocanal, Javier
Torija, M.
Rivera Calzada, Alberto Carlos
Sefrioui, Zouhair
Leighton, C.
León Yebra, Carlos
Santamaría Sánchez-Barriga, Jacobo
author Bruno, Flavio Yair
author_facet Bruno, Flavio Yair
Garcia Barriocanal, Javier
Torija, M.
Rivera Calzada, Alberto Carlos
Sefrioui, Zouhair
Leighton, C.
León Yebra, Carlos
Santamaría Sánchez-Barriga, Jacobo
author_role author
author2 Garcia Barriocanal, Javier
Torija, M.
Rivera Calzada, Alberto Carlos
Sefrioui, Zouhair
Leighton, C.
León Yebra, Carlos
Santamaría Sánchez-Barriga, Jacobo
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 537
Physics
Applied.
Electricidad
Electrónica (Física)
2202.03 Electricidad
topic 537
Physics
Applied.
Electricidad
Electrónica (Física)
2202.03 Electricidad
description Electrical transport properties of heteroepitaxial p-n junctions made of La_(0.8)Sr_(0.2)CoO_(3) and SrTi_(0.99)Nb_(0.01)O_(3) were studied. Junctions display highly rectifying current-voltage characteristics over a wide temperature range (20–300 K). Two distinct transport mechanisms are identified: tunneling assisted by interface states at T<130 K and diffusion/recombination at higher temperatures. Capacitance-voltage characteristics are used to determine the junction built-in potential at different frequencies. A capacitance relaxation is found due to charge trapping at interface states. Interface states, which deeply affect transport, are discussed in connection to charge-transfer processes related to the polarity mismatch at the interface.
publishDate 2008
dc.date.none.fl_str_mv 2008
2008-02-25
2008
2008-02-25
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/51411
url https://hdl.handle.net/20.500.14352/51411
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869419099012988928
score 15,300724

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