The configurational energy gap between amorphous and crystalline silicon

The crystallization enthalpy of pure amorphous silicon (a-Si) and hydrogenated a-Si was measured by differential scanning calorimetry (DSC) for a large set of materials deposited from the vapour phase by different techniques. Although the values cover a wide range (200-480 J/g), the minimum value is...

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Detalles Bibliográficos
Autores: Kail, F., Farjas Silva, Jordi, Roura Grabulosa, Pere, Secouard, C., Nos Aguilà, Oriol, Bertomeu i Balagueró, Joan, Roca i Cabarrocas, P. (Pere)
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2011
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/98045
Acceso en línea:https://hdl.handle.net/2445/98045
Access Level:acceso abierto
Palabra clave:Silici
Cristal·lització
Entalpia
Calorimetria
Silicon
Crystallization
Enthalpy
Calorimetry
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spelling The configurational energy gap between amorphous and crystalline siliconKail, F.Farjas Silva, JordiRoura Grabulosa, PereSecouard, C.Nos Aguilà, OriolBertomeu i Balagueró, JoanRoca i Cabarrocas, P. (Pere)SiliciCristal·litzacióEntalpiaCalorimetriaSiliconCrystallizationEnthalpyCalorimetryThe crystallization enthalpy of pure amorphous silicon (a-Si) and hydrogenated a-Si was measured by differential scanning calorimetry (DSC) for a large set of materials deposited from the vapour phase by different techniques. Although the values cover a wide range (200-480 J/g), the minimum value is common to all the deposition techniques used and close to the predicted minimum strain energy of relaxed a-Si (240 ± 25 J/g). This result gives a reliable value for the configurational energy gap between a-Si and crystalline silicon. An excess of enthalpy above this minimum value can be ascribed to coordination defects.Wiley-VCH2011info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttps://hdl.handle.net/2445/98045Articles publicats en revistes (Física Aplicada)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésVersió postprint del document publicat a: http://dx.doi.org/10.1002/pssr.201105333physica status solidi (RRL) - Rapid Research Letters, 2011, vol. 5, num. 10-11, p. 361-363http://dx.doi.org/10.1002/pssr.201105333(c) Wiley-VCH, 2011info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/980452026-05-27T06:46:51Z
dc.title.none.fl_str_mv The configurational energy gap between amorphous and crystalline silicon
title The configurational energy gap between amorphous and crystalline silicon
spellingShingle The configurational energy gap between amorphous and crystalline silicon
Kail, F.
Silici
Cristal·lització
Entalpia
Calorimetria
Silicon
Crystallization
Enthalpy
Calorimetry
title_short The configurational energy gap between amorphous and crystalline silicon
title_full The configurational energy gap between amorphous and crystalline silicon
title_fullStr The configurational energy gap between amorphous and crystalline silicon
title_full_unstemmed The configurational energy gap between amorphous and crystalline silicon
title_sort The configurational energy gap between amorphous and crystalline silicon
dc.creator.none.fl_str_mv Kail, F.
Farjas Silva, Jordi
Roura Grabulosa, Pere
Secouard, C.
Nos Aguilà, Oriol
Bertomeu i Balagueró, Joan
Roca i Cabarrocas, P. (Pere)
author Kail, F.
author_facet Kail, F.
Farjas Silva, Jordi
Roura Grabulosa, Pere
Secouard, C.
Nos Aguilà, Oriol
Bertomeu i Balagueró, Joan
Roca i Cabarrocas, P. (Pere)
author_role author
author2 Farjas Silva, Jordi
Roura Grabulosa, Pere
Secouard, C.
Nos Aguilà, Oriol
Bertomeu i Balagueró, Joan
Roca i Cabarrocas, P. (Pere)
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Silici
Cristal·lització
Entalpia
Calorimetria
Silicon
Crystallization
Enthalpy
Calorimetry
topic Silici
Cristal·lització
Entalpia
Calorimetria
Silicon
Crystallization
Enthalpy
Calorimetry
description The crystallization enthalpy of pure amorphous silicon (a-Si) and hydrogenated a-Si was measured by differential scanning calorimetry (DSC) for a large set of materials deposited from the vapour phase by different techniques. Although the values cover a wide range (200-480 J/g), the minimum value is common to all the deposition techniques used and close to the predicted minimum strain energy of relaxed a-Si (240 ± 25 J/g). This result gives a reliable value for the configurational energy gap between a-Si and crystalline silicon. An excess of enthalpy above this minimum value can be ascribed to coordination defects.
publishDate 2011
dc.date.none.fl_str_mv 2011
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/98045
url https://hdl.handle.net/2445/98045
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Versió postprint del document publicat a: http://dx.doi.org/10.1002/pssr.201105333
physica status solidi (RRL) - Rapid Research Letters, 2011, vol. 5, num. 10-11, p. 361-363
http://dx.doi.org/10.1002/pssr.201105333
dc.rights.none.fl_str_mv (c) Wiley-VCH, 2011
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) Wiley-VCH, 2011
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Wiley-VCH
publisher.none.fl_str_mv Wiley-VCH
dc.source.none.fl_str_mv Articles publicats en revistes (Física Aplicada)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300719

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