Cita APA

Dueñas Carazo, S., Castán Lanaspa, M. H., García García, H., González Ossorio, Ó., Domínguez, L. A., Seemen, H., . . . Aarik, J. (2018). The role of defects in the resistive switching behavior of Ta2O5-TiO2-based metal–insulator–metal (MIM) devices for memory applications.

Citación estilo Chicago

Dueñas Carazo, Salvador, María Helena Castán Lanaspa, Héctor García García, Óscar González Ossorio, Leidy Azucena Domínguez, Helina Seemen, Aile Tamm, Kaupo Kukli, y Jaan Aarik. The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-based Metal–insulator–metal (MIM) Devices for Memory Applications. 2018.

Cita MLA

Dueñas Carazo, Salvador, et al. The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-based Metal–insulator–metal (MIM) Devices for Memory Applications. 2018.