Performance of SiC Diodes at Very High Doses of Low-Energy Proton Beams Under FLASH Conditions
FLASH therapy has emerged as a promising radiotherapy technique, minimizing damage to healthy tissues while maintaining effective tumor control. Achieving FLASH conditions requires dose rates exceeding 40 Gy/s, but conventional dosimetry systems fail under these conditions. Recently, IMB-CNM (CSIC)...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2025 |
| País: | España |
| Institución: | Universidad de Sevilla (US) |
| Repositorio: | idUS. Depósito de Investigación de la Universidad de Sevilla |
| OAI Identifier: | oai:idus.us.es:11441/175780 |
| Acceso en línea: | https://hdl.handle.net/11441/175780 https://doi.org/10.1109/TRPMS.2025.3591229 |
| Access Level: | acceso abierto |
| Palabra clave: | Protontherapy FLASH silicon carbide diodes Ultra-high mean dose rate |
| Sumario: | FLASH therapy has emerged as a promising radiotherapy technique, minimizing damage to healthy tissues while maintaining effective tumor control. Achieving FLASH conditions requires dose rates exceeding 40 Gy/s, but conventional dosimetry systems fail under these conditions. Recently, IMB-CNM (CSIC) developed SiC p-n diodes with 30 μm diameter and 3 μm thickness, specifically designed for FLASH radiotherapy. This study investigates their response to low-energy UHDR proton beams after high and ultra-high accumulated doses for the first time. Experiments were performed in the 3 MV tandem accelerator at CNA using 1 MeV and 2 MeV protons with a pulsed beam system, achieving mean dose rates of 10 kGy/s, dose-per-pulse of 5.6 Gy, and dose rate within the pulse of 4.6 MGy/s. Ion pulses were characterized using a Faraday Cup and Rutherford Backscattering Spectrometry (RBS). Two SiC diodes were studied: one pre-irradiated with 3.6 MGy for extreme applications and another for early irradiation stages. The pre-irradiated diode showed a sensitivity decrease of -1.34 %/kGy up to 750 kGy, stabilizing within 7 % response variation up to 4.5 MGy. The response remained linear within 10 % at mean dose rate up to 5 kGy/s for 2 MeV protons, demonstrating the feasibility of this technology for FLASH applications. |
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