Interplay between Connectivity and Passivating Agents in Perovskite Quantum Dot Networks [Dataset]
Introducing quantum dots (QDs) as the active element of an optoelectronic device demands its incorporation in the shape of interconnected arrays that allow for some degree of electronic coupling in order to inject/extract charge carriers. In doing so, beyond reducing the degree of quantum confinemen...
| Autores: | , , , , , |
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| Formato: | conjunto de datos |
| Fecha de publicación: | 2024 |
| País: | España |
| Recursos: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/368936 |
| Acesso em linha: | http://hdl.handle.net/10261/368936 https://doi.org/10.20350/digitalCSIC/16587 |
| Access Level: | acceso abierto |
| Palavra-chave: | Lifetime Carrier recombination Semiconductor quantum-dot networks Halide perovskites Trap states |
| Resumo: | Introducing quantum dots (QDs) as the active element of an optoelectronic device demands its incorporation in the shape of interconnected arrays that allow for some degree of electronic coupling in order to inject/extract charge carriers. In doing so, beyond reducing the degree of quantum confinement, carriers are exposed to an enhanced defect landscape as they can access adjacent QDs, which is at the origin of the strong reduction of photoluminescence observed in QD solids when compared to that of the isolated QDs. In this work we demonstrate how a proper defect passivating strategy or atmospheric treatment can greatly enhance charge diffusion in a QD film, needed for an optimal carrier injection/extraction demanded for optoelectronic applications, and also improved its stability against external radiation. From a fundamental perspective, we provide evidence showing that trap density distribution, rather than QD size distribution, is mostly responsible for the observed variations in emission decay rates present in the QD networks under analysis. |
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