Analysis of the role of mobility-lifetime products in the performance of amorphous silicon p-i-n solar cells
An analytical model of an amorphous silicon p-i-n solar cell is presented to describe its photovoltaic behavior under short-circuit conditions. It has been developed from the analysis of numerical simulation results. These results reproduce the experimental illumination dependence of short-circuit r...
| Autores: | , , , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 1999 |
| País: | España |
| Institución: | Universidad de Barcelona |
| Repositorio: | Dipòsit Digital de la UB |
| OAI Identifier: | oai:diposit.ub.edu:2445/24787 |
| Acceso en línea: | https://hdl.handle.net/2445/24787 |
| Access Level: | acceso abierto |
| Palabra clave: | Cèl·lules solars Cèl·lules fotovoltaiques Camps elèctrics Simulació per ordinador Solar cells Photovoltaic cells Electric fields Computer simulation |
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Analysis of the role of mobility-lifetime products in the performance of amorphous silicon p-i-n solar cellsAsensi López, José MiguelMerten, JensVoz Sánchez, CristóbalAndreu i Batallé, JordiCèl·lules solarsCèl·lules fotovoltaiquesCamps elèctricsSimulació per ordinadorSolar cellsPhotovoltaic cellsElectric fieldsComputer simulationAn analytical model of an amorphous silicon p-i-n solar cell is presented to describe its photovoltaic behavior under short-circuit conditions. It has been developed from the analysis of numerical simulation results. These results reproduce the experimental illumination dependence of short-circuit resistance, which is the reciprocal slope of the I(V) curve at the short-circuit point. The recombination rate profiles show that recombination in the regions of charged defects near the p-i and i-n interfaces should not be overlooked. Based on the interpretation of the numerical solutions, we deduce analytical expressions for the recombination current and short-circuit resistance. These expressions are given as a function of an effective ¿¿ product, which depends on the intensity of illumination. We also study the effect of surface recombination with simple expressions that describe its influence on current loss and short-circuit resistance.American Institute of Physics1999info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://hdl.handle.net/2445/24787Articles publicats en revistes (Física Aplicada)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésReproducció del document publicat a: http://dx.doi.org/10.1063/1.369634Journal of Applied Physics, 1999, vol. 85, num. 5, p. 2939-2951http://dx.doi.org/10.1063/1.369634(c) American Institute of Physics, 1999info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/247872026-05-27T06:46:51Z |
| dc.title.none.fl_str_mv |
Analysis of the role of mobility-lifetime products in the performance of amorphous silicon p-i-n solar cells |
| title |
Analysis of the role of mobility-lifetime products in the performance of amorphous silicon p-i-n solar cells |
| spellingShingle |
Analysis of the role of mobility-lifetime products in the performance of amorphous silicon p-i-n solar cells Asensi López, José Miguel Cèl·lules solars Cèl·lules fotovoltaiques Camps elèctrics Simulació per ordinador Solar cells Photovoltaic cells Electric fields Computer simulation |
| title_short |
Analysis of the role of mobility-lifetime products in the performance of amorphous silicon p-i-n solar cells |
| title_full |
Analysis of the role of mobility-lifetime products in the performance of amorphous silicon p-i-n solar cells |
| title_fullStr |
Analysis of the role of mobility-lifetime products in the performance of amorphous silicon p-i-n solar cells |
| title_full_unstemmed |
Analysis of the role of mobility-lifetime products in the performance of amorphous silicon p-i-n solar cells |
| title_sort |
Analysis of the role of mobility-lifetime products in the performance of amorphous silicon p-i-n solar cells |
| dc.creator.none.fl_str_mv |
Asensi López, José Miguel Merten, Jens Voz Sánchez, Cristóbal Andreu i Batallé, Jordi |
| author |
Asensi López, José Miguel |
| author_facet |
Asensi López, José Miguel Merten, Jens Voz Sánchez, Cristóbal Andreu i Batallé, Jordi |
| author_role |
author |
| author2 |
Merten, Jens Voz Sánchez, Cristóbal Andreu i Batallé, Jordi |
| author2_role |
author author author |
| dc.subject.none.fl_str_mv |
Cèl·lules solars Cèl·lules fotovoltaiques Camps elèctrics Simulació per ordinador Solar cells Photovoltaic cells Electric fields Computer simulation |
| topic |
Cèl·lules solars Cèl·lules fotovoltaiques Camps elèctrics Simulació per ordinador Solar cells Photovoltaic cells Electric fields Computer simulation |
| description |
An analytical model of an amorphous silicon p-i-n solar cell is presented to describe its photovoltaic behavior under short-circuit conditions. It has been developed from the analysis of numerical simulation results. These results reproduce the experimental illumination dependence of short-circuit resistance, which is the reciprocal slope of the I(V) curve at the short-circuit point. The recombination rate profiles show that recombination in the regions of charged defects near the p-i and i-n interfaces should not be overlooked. Based on the interpretation of the numerical solutions, we deduce analytical expressions for the recombination current and short-circuit resistance. These expressions are given as a function of an effective ¿¿ product, which depends on the intensity of illumination. We also study the effect of surface recombination with simple expressions that describe its influence on current loss and short-circuit resistance. |
| publishDate |
1999 |
| dc.date.none.fl_str_mv |
1999 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion |
| format |
article |
| status_str |
publishedVersion |
| dc.identifier.none.fl_str_mv |
https://hdl.handle.net/2445/24787 |
| url |
https://hdl.handle.net/2445/24787 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
Reproducció del document publicat a: http://dx.doi.org/10.1063/1.369634 Journal of Applied Physics, 1999, vol. 85, num. 5, p. 2939-2951 http://dx.doi.org/10.1063/1.369634 |
| dc.rights.none.fl_str_mv |
(c) American Institute of Physics, 1999 info:eu-repo/semantics/openAccess |
| rights_invalid_str_mv |
(c) American Institute of Physics, 1999 |
| eu_rights_str_mv |
openAccess |
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application/pdf |
| dc.publisher.none.fl_str_mv |
American Institute of Physics |
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American Institute of Physics |
| dc.source.none.fl_str_mv |
Articles publicats en revistes (Física Aplicada) reponame:Dipòsit Digital de la UB instname:Universidad de Barcelona |
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Universidad de Barcelona |
| reponame_str |
Dipòsit Digital de la UB |
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Dipòsit Digital de la UB |
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1869418638703853568 |
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15.301603 |