Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy

A series of InxAl1-xAs samples (0.51≪x≪0.55)coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photo...

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Detalles Bibliográficos
Autores: Roura Grabulosa, Pere, López-de Miguel, Manel, Cornet i Calveras, Albert, Morante i Lleonart, Joan R.
Tipo de recurso: artículo
Fecha de publicación:1997
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:10256/3048
Acceso en línea:http://hdl.handle.net/10256/3048
Access Level:acceso abierto
Palabra clave:Compostos d'alumini
Compostos d'indi
Fotoluminescència
Semiconductors
Aluminum compounds
Indium compounds
Photoluminescence
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spelling Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopyRoura Grabulosa, PereLópez-de Miguel, ManelCornet i Calveras, AlbertMorante i Lleonart, Joan R.Compostos d'aluminiCompostos d'indiFotoluminescènciaSemiconductorsAluminum compoundsIndium compoundsPhotoluminescenceA series of InxAl1-xAs samples (0.51≪x≪0.55)coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x=0.532, at 14 K we have obtained Eg0=1549±6 meVAmerican Institute of Physics1997info:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10256/3048http://hdl.handle.net/10256/3048© Journal of Applied Physics, 1997, vol. 81, núm. 10, p. 6916-6920Articles publicats (D-F)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)Inglésinfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.365253info:eu-repo/semantics/altIdentifier/issn/0021-8979Tots els drets reservatsinfo:eu-repo/semantics/openAccessoai:recercat.cat:10256/30482026-05-29T05:05:01Z
dc.title.none.fl_str_mv Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy
title Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy
spellingShingle Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy
Roura Grabulosa, Pere
Compostos d'alumini
Compostos d'indi
Fotoluminescència
Semiconductors
Aluminum compounds
Indium compounds
Photoluminescence
title_short Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy
title_full Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy
title_fullStr Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy
title_full_unstemmed Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy
title_sort Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy
dc.creator.none.fl_str_mv Roura Grabulosa, Pere
López-de Miguel, Manel
Cornet i Calveras, Albert
Morante i Lleonart, Joan R.
author Roura Grabulosa, Pere
author_facet Roura Grabulosa, Pere
López-de Miguel, Manel
Cornet i Calveras, Albert
Morante i Lleonart, Joan R.
author_role author
author2 López-de Miguel, Manel
Cornet i Calveras, Albert
Morante i Lleonart, Joan R.
author2_role author
author
author
dc.subject.none.fl_str_mv Compostos d'alumini
Compostos d'indi
Fotoluminescència
Semiconductors
Aluminum compounds
Indium compounds
Photoluminescence
topic Compostos d'alumini
Compostos d'indi
Fotoluminescència
Semiconductors
Aluminum compounds
Indium compounds
Photoluminescence
description A series of InxAl1-xAs samples (0.51≪x≪0.55)coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x=0.532, at 14 K we have obtained Eg0=1549±6 meV
publishDate 1997
dc.date.none.fl_str_mv 1997
dc.type.none.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10256/3048
http://hdl.handle.net/10256/3048
url http://hdl.handle.net/10256/3048
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.365253
info:eu-repo/semantics/altIdentifier/issn/0021-8979
dc.rights.none.fl_str_mv Tots els drets reservats
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Tots els drets reservats
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv © Journal of Applied Physics, 1997, vol. 81, núm. 10, p. 6916-6920
Articles publicats (D-F)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.81155