Enhancement of the photoelectrochemical properties of Cl-doped ZnO nanowires by tuning their coaxial doping profile

Arrays of vertically aligned ZnO:Cl/ZnO core-shell nanowires were used to demonstrate that the control of the coaxial doping profile in homojunction nanostructures can improve their surface charge carrier transfer while conserving potentially excellent transport properties. It is experimentally show...

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Autores: Fan, Jiandong, Güell Vilà, Frank, Fàbrega Gallego, Cristian, Shavel, Alexey, Carreté, Àlex, Andreu Arbella, Teresa, Morante i Lleonart, Joan Ramon, Cabot i Codina, Andreu
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2011
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/33920
Acceso en línea:https://hdl.handle.net/2445/33920
Access Level:acceso abierto
Palabra clave:Nanotubs
Pel·lícules fines
Òxid de zinc
Nanoestructures
Luminescència
Nanotubes
Thin films
Zinc oxide
Nanostructures
Luminescence
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spelling Enhancement of the photoelectrochemical properties of Cl-doped ZnO nanowires by tuning their coaxial doping profileFan, JiandongGüell Vilà, FrankFàbrega Gallego, CristianShavel, AlexeyCarreté, ÀlexAndreu Arbella, TeresaMorante i Lleonart, Joan RamonCabot i Codina, AndreuNanotubsPel·lícules finesÒxid de zincNanoestructuresLuminescènciaNanotubesThin filmsZinc oxideNanostructuresLuminescenceArrays of vertically aligned ZnO:Cl/ZnO core-shell nanowires were used to demonstrate that the control of the coaxial doping profile in homojunction nanostructures can improve their surface charge carrier transfer while conserving potentially excellent transport properties. It is experimentally shown that the presence of a ZnO shell enhances the photoelectrochemical properties of ZnO:Cl nanowires up to a factor 5. Likewise, the ZnO shell promotes the visible photoluminescence band in highly conducting ZnO:Cl nanowires. These lines of evidence are associated with the increase of the nanowires" surface depletion layerAmerican Institute of Physics2013201320112013info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion4 p.application/pdfhttps://hdl.handle.net/2445/33920Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésReproducció del document publicat a: http://dx.doi.org/10.1063/1.3673287Applied Physics Letters, 2011, vol. 99, p. 262102-1-262102-4http://dx.doi.org/10.1063/1.3673287(c) American Institute of Physics , 2011info:eu-repo/semantics/openAccessoai:recercat.cat:2445/339202026-05-29T05:05:01Z
dc.title.none.fl_str_mv Enhancement of the photoelectrochemical properties of Cl-doped ZnO nanowires by tuning their coaxial doping profile
title Enhancement of the photoelectrochemical properties of Cl-doped ZnO nanowires by tuning their coaxial doping profile
spellingShingle Enhancement of the photoelectrochemical properties of Cl-doped ZnO nanowires by tuning their coaxial doping profile
Fan, Jiandong
Nanotubs
Pel·lícules fines
Òxid de zinc
Nanoestructures
Luminescència
Nanotubes
Thin films
Zinc oxide
Nanostructures
Luminescence
title_short Enhancement of the photoelectrochemical properties of Cl-doped ZnO nanowires by tuning their coaxial doping profile
title_full Enhancement of the photoelectrochemical properties of Cl-doped ZnO nanowires by tuning their coaxial doping profile
title_fullStr Enhancement of the photoelectrochemical properties of Cl-doped ZnO nanowires by tuning their coaxial doping profile
title_full_unstemmed Enhancement of the photoelectrochemical properties of Cl-doped ZnO nanowires by tuning their coaxial doping profile
title_sort Enhancement of the photoelectrochemical properties of Cl-doped ZnO nanowires by tuning their coaxial doping profile
dc.creator.none.fl_str_mv Fan, Jiandong
Güell Vilà, Frank
Fàbrega Gallego, Cristian
Shavel, Alexey
Carreté, Àlex
Andreu Arbella, Teresa
Morante i Lleonart, Joan Ramon
Cabot i Codina, Andreu
author Fan, Jiandong
author_facet Fan, Jiandong
Güell Vilà, Frank
Fàbrega Gallego, Cristian
Shavel, Alexey
Carreté, Àlex
Andreu Arbella, Teresa
Morante i Lleonart, Joan Ramon
Cabot i Codina, Andreu
author_role author
author2 Güell Vilà, Frank
Fàbrega Gallego, Cristian
Shavel, Alexey
Carreté, Àlex
Andreu Arbella, Teresa
Morante i Lleonart, Joan Ramon
Cabot i Codina, Andreu
author2_role author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Nanotubs
Pel·lícules fines
Òxid de zinc
Nanoestructures
Luminescència
Nanotubes
Thin films
Zinc oxide
Nanostructures
Luminescence
topic Nanotubs
Pel·lícules fines
Òxid de zinc
Nanoestructures
Luminescència
Nanotubes
Thin films
Zinc oxide
Nanostructures
Luminescence
description Arrays of vertically aligned ZnO:Cl/ZnO core-shell nanowires were used to demonstrate that the control of the coaxial doping profile in homojunction nanostructures can improve their surface charge carrier transfer while conserving potentially excellent transport properties. It is experimentally shown that the presence of a ZnO shell enhances the photoelectrochemical properties of ZnO:Cl nanowires up to a factor 5. Likewise, the ZnO shell promotes the visible photoluminescence band in highly conducting ZnO:Cl nanowires. These lines of evidence are associated with the increase of the nanowires" surface depletion layer
publishDate 2011
dc.date.none.fl_str_mv 2011
2013
2013
2013
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/33920
url https://hdl.handle.net/2445/33920
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://dx.doi.org/10.1063/1.3673287
Applied Physics Letters, 2011, vol. 99, p. 262102-1-262102-4
http://dx.doi.org/10.1063/1.3673287
dc.rights.none.fl_str_mv (c) American Institute of Physics , 2011
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) American Institute of Physics , 2011
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 4 p.
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,812429

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