Digital light processing of SiO2-TiO2 materials by combining ceramic slurries and metal precursors

One-step additive manufacturing of functional ceramics via Digital Light Processing (DLP) is still under development. The increased demand of such kind of materials creates new opportunities to investigate alternatives and new methodologies. In this work, a combination of photocurable SiO2 slurries...

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Bibliographic Details
Authors: Borlaf, Mario, Candelario, Víctor M., López-Sánchez, Jesús, Li, Yiting, Valero-Saiz, María, Cepa-López, Víctor, Mas-Ballesté, Rubén, Moreno, Rodrigo
Format: article
Status:Published version
Publication Date:2025
Country:España
Institution:Consejo Superior de Investigaciones Científicas (CSIC)
Repository:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/415714
Online Access:http://hdl.handle.net/10261/415714
https://api.elsevier.com/content/abstract/scopus_id/105008092777
Access Level:Open access
Keyword:Additive manufacturing
Ceramics
Photocatalysis
SiO2
TiO2
Description
Summary:One-step additive manufacturing of functional ceramics via Digital Light Processing (DLP) is still under development. The increased demand of such kind of materials creates new opportunities to investigate alternatives and new methodologies. In this work, a combination of photocurable SiO2 slurries with Ti metal precursor (titanium isopropoxide, TIPO) is used to fabricate SiO2-TiO2 materials by DLP. Slurries with different solids content and metal precursor concentration were prepared. The obtained materials were characterized and evaluated as photocatalysts. The anatase-TiO2 phase was retained at temperatures as high as 1200 ºC in all cases, although for higher concentrations the rutile phase was also detected at such temperature. From the methylene blue degradation experiments it can be extracted that the SiO2 surface was fully covered when a 10 wt% of metal precursor was added, and the highest photocatalytic activity was obtained for the samples with 10–20 wt% of TIPO sintered at 1000–1100 ºC/1 h.