Spin ordering in semiconductor heterostructures with ferromagnetic δ layers

We report on theoretical study of the magnetic properties of a magnetic metal δ layer embedded into a nonmagnetic nondegenerated semiconductor, taking into account the diffusion smearing, that is unavoidable in the case of delta doping. The system of interest is modeled by the δ layer core, enriched...

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Detalles Bibliográficos
Autores: Men'shov, V. N., Tugushev, V. V., Caprara, S., Echenique, Pedro M., Chulkov, Eugene V.
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2009
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/226010
Acceso en línea:http://hdl.handle.net/10261/226010
Access Level:acceso abierto
Descripción
Sumario:We report on theoretical study of the magnetic properties of a magnetic metal δ layer embedded into a nonmagnetic nondegenerated semiconductor, taking into account the diffusion smearing, that is unavoidable in the case of delta doping. The system of interest is modeled by the δ layer core, enriched in metal atoms, and a nearly depleted smeared periphery. Confinement states in the form of two-dimensional spin-polarized subbands within the semiconductor band gap arise from potential and exchange scattering of carriers at the core. The mechanism of indirect exchange between impurity spins placed within the peripheral region of the δ layer, via partially occupied confinement states, is analyzed. It is shown that, in the case of a ferromagnetic core, the impurity spins align parallel or antiparallel to the core magnetization, due to the polarization of carriers in the confinement states. Allowing for the confinement mechanism of interaction between the impurity spins as well as for the exchange mechanism through deep levels of the semiconductor host, the magnetic configuration of the impurity spins in the peripheral region of the δ layer is obtained in the framework of a phenomenological approach.