Unravelling and controlling hidden imprint fields in ferroelectric capacitors

Ferroelectric materials have a spontaneous polarization that can point along energetically equivalent, opposite directions. However, when ferroelectric layers are sandwiched between different metallic electrodes, asymmetric electrostatic boundary conditions may induce the appearance of an electric f...

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Autores: Liu, Fanmao|||0000-0001-7590-8062, Fina, Ignasi|||0000-0003-4182-6194, Bertacco, Riccardo|||0000-0002-8109-9166, Fontcuberta, Josep|||0000-0002-7955-2320
Tipo de recurso: artículo
Fecha de publicación:2016
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:204855
Acceso en línea:https://ddd.uab.cat/record/204855
https://dx.doi.org/urn:doi:10.1038/srep25028
Access Level:acceso abierto
Palabra clave:Ferroelectrics and multiferroics
Information storage
Photonic devices
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spelling Unravelling and controlling hidden imprint fields in ferroelectric capacitorsLiu, Fanmao|||0000-0001-7590-8062Fina, Ignasi|||0000-0003-4182-6194Bertacco, Riccardo|||0000-0002-8109-9166Fontcuberta, Josep|||0000-0002-7955-2320Ferroelectrics and multiferroicsInformation storagePhotonic devicesFerroelectric materials have a spontaneous polarization that can point along energetically equivalent, opposite directions. However, when ferroelectric layers are sandwiched between different metallic electrodes, asymmetric electrostatic boundary conditions may induce the appearance of an electric field (imprint field, E imp) that breaks the degeneracy of the polarization directions, favouring one of them. This has dramatic consequences on functionality of ferroelectric-based devices such as ferroelectric memories or photodetectors. Therefore, to cancel out the E imp, ferroelectric components are commonly built using symmetric contact configuration. Indeed, in this symmetric contact configuration, when measurements are done under time-varying electric fields of relatively low frequency, an archetypical symmetric single-step switching process is observed, indicating E imp ∼ 0. However, we report here on the discovery that when measurements are performed at high frequency, a well-defined double-step switching is observed, indicating the presence of E imp. We argue that this frequency dependence originates from short-living head-to-head or tail-to-tail ferroelectric capacitors in the device. We demonstrate that we can modulate E imp and the life-time of head-to-head or tail-to-tail polarization configurations by adjusting the polarization screening charges by suitable illumination. These findings are of relevance to understand the effects of internal electric fields on pivotal ferroelectric properties, such as memory retention and photoresponse. 22016-01-0120162016-01-01Articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/204855https://dx.doi.org/urn:doi:10.1038/srep25028reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengMinisterio de Economía y Competitividad https://doi.org/10.13039/501100003329 MAT2014-56063-C2-1-RAgència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2014/SGR-734Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 SEV-2015-0496open accesshttp://purl.org/coar/access_right/c_abf2Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.https://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2048552026-06-06T12:50:31Z
dc.title.none.fl_str_mv Unravelling and controlling hidden imprint fields in ferroelectric capacitors
title Unravelling and controlling hidden imprint fields in ferroelectric capacitors
spellingShingle Unravelling and controlling hidden imprint fields in ferroelectric capacitors
Liu, Fanmao|||0000-0001-7590-8062
Ferroelectrics and multiferroics
Information storage
Photonic devices
title_short Unravelling and controlling hidden imprint fields in ferroelectric capacitors
title_full Unravelling and controlling hidden imprint fields in ferroelectric capacitors
title_fullStr Unravelling and controlling hidden imprint fields in ferroelectric capacitors
title_full_unstemmed Unravelling and controlling hidden imprint fields in ferroelectric capacitors
title_sort Unravelling and controlling hidden imprint fields in ferroelectric capacitors
dc.creator.none.fl_str_mv Liu, Fanmao|||0000-0001-7590-8062
Fina, Ignasi|||0000-0003-4182-6194
Bertacco, Riccardo|||0000-0002-8109-9166
Fontcuberta, Josep|||0000-0002-7955-2320
author Liu, Fanmao|||0000-0001-7590-8062
author_facet Liu, Fanmao|||0000-0001-7590-8062
Fina, Ignasi|||0000-0003-4182-6194
Bertacco, Riccardo|||0000-0002-8109-9166
Fontcuberta, Josep|||0000-0002-7955-2320
author_role author
author2 Fina, Ignasi|||0000-0003-4182-6194
Bertacco, Riccardo|||0000-0002-8109-9166
Fontcuberta, Josep|||0000-0002-7955-2320
author2_role author
author
author
dc.subject.none.fl_str_mv Ferroelectrics and multiferroics
Information storage
Photonic devices
topic Ferroelectrics and multiferroics
Information storage
Photonic devices
description Ferroelectric materials have a spontaneous polarization that can point along energetically equivalent, opposite directions. However, when ferroelectric layers are sandwiched between different metallic electrodes, asymmetric electrostatic boundary conditions may induce the appearance of an electric field (imprint field, E imp) that breaks the degeneracy of the polarization directions, favouring one of them. This has dramatic consequences on functionality of ferroelectric-based devices such as ferroelectric memories or photodetectors. Therefore, to cancel out the E imp, ferroelectric components are commonly built using symmetric contact configuration. Indeed, in this symmetric contact configuration, when measurements are done under time-varying electric fields of relatively low frequency, an archetypical symmetric single-step switching process is observed, indicating E imp ∼ 0. However, we report here on the discovery that when measurements are performed at high frequency, a well-defined double-step switching is observed, indicating the presence of E imp. We argue that this frequency dependence originates from short-living head-to-head or tail-to-tail ferroelectric capacitors in the device. We demonstrate that we can modulate E imp and the life-time of head-to-head or tail-to-tail polarization configurations by adjusting the polarization screening charges by suitable illumination. These findings are of relevance to understand the effects of internal electric fields on pivotal ferroelectric properties, such as memory retention and photoresponse.
publishDate 2016
dc.date.none.fl_str_mv 2
2016-01-01
2016
2016-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/204855
https://dx.doi.org/urn:doi:10.1038/srep25028
url https://ddd.uab.cat/record/204855
https://dx.doi.org/urn:doi:10.1038/srep25028
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 MAT2014-56063-C2-1-R
Agència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2014/SGR-734
Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 SEV-2015-0496
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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