Subband energy in two-band delta-doped semiconductors
We study the electron dynamics in a two-band δ-doped semiconductor within the envelope-function approximation. Using a simple parametrization of the confining potential arising from the ionized donors in the δ-doping layer, we are able to find exact solutions of the Dirac-type equation describing th...
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| Format: | article |
| Publication Date: | 1996 |
| Country: | España |
| Institution: | Universidad Complutense de Madrid (UCM) |
| Repository: | Docta Complutense |
| Language: | English |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/60218 |
| Online Access: | https://hdl.handle.net/20.500.14352/60218 |
| Access Level: | Open access |
| Keyword: | 538.9 Doping layer Gaas Mbe Física de materiales Física del estado sólido 2211 Física del Estado Sólido |
| Summary: | We study the electron dynamics in a two-band δ-doped semiconductor within the envelope-function approximation. Using a simple parametrization of the confining potential arising from the ionized donors in the δ-doping layer, we are able to find exact solutions of the Dirac-type equation describing the coupling of host bands. As an application we then consider Si δ-doped GaAs. In particular we find that the ground subband energy scales as a power law of the Si concentration per unit area in a wide range of doping levels. In addition, the coupling of host bands leads to a depression of the subband energy due to nonparabolicity effects. |
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