Ultralow-dielectric-constant amorphous boron nitride
Decrease in processing speed due to increased resistance and capacitance delay is a major obstacle for the down-scaling of electronics. Minimizing the dimensions of interconnects (metal wires that connect different electronic components on a chip) is crucial for the miniaturization of devices. Inter...
| Autores: | , , , , , , , , , , , , , , , , , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 2020 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:236030 |
| Acceso en línea: | https://ddd.uab.cat/record/236030 https://dx.doi.org/urn:doi:10.1038/s41586-020-2375-9 |
| Access Level: | acceso abierto |
| Palabra clave: | Electronic devices Two-dimensional materials |
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Ultralow-dielectric-constant amorphous boron nitrideHong, SeokmoLee, Chang-Seok|||0000-0002-6078-3874Lee, Min-HyunLee, Yeongdong|||0000-0001-9749-5270Ma, Kyung YeolKim, Gwangwoo|||0000-0001-8519-4411Yoon, Seong InIhm, Kyuwook IhmKim, Ki-JeongShin, Tae JooKim, Sang WonJeon, Eun-chae|||0000-0002-6951-219XJeon, HansolKim, Ju-YoungLee, Hyung-IkLee, ZonghoonAntidormi, Aleandro|||0000-0002-5266-8147Roche, Stephan|||0000-0003-0323-4665Chhowalla, ManishShin, Hyeon-Jin|||0000-0002-6992-6341Shin, Hyeon Suk|||0000-0003-0495-7443Electronic devicesTwo-dimensional materialsDecrease in processing speed due to increased resistance and capacitance delay is a major obstacle for the down-scaling of electronics. Minimizing the dimensions of interconnects (metal wires that connect different electronic components on a chip) is crucial for the miniaturization of devices. Interconnects are isolated from each other by non-conducting (dielectric) layers. So far, research has mostly focused on decreasing the resistance of scaled interconnects because integration of dielectrics using low-temperature deposition processes compatible with complementary metal-oxide-semiconductors is technically challenging. Interconnect isolation materials must have low relative dielectric constants (κ values), serve as diffusion barriers against the migration of metal into semiconductors, and be thermally, chemically and mechanically stable. Specifically, the International Roadmap for Devices and Systems recommends the development of dielectrics with κ values of less than 2 by 2028. Existing low-κ materials (such as silicon oxide derivatives, organic compounds and aerogels) have κ values greater than 2 and poor thermo-mechanical properties. Here we report three-nanometre-thick amorphous boron nitride films with ultralow κ values of 1.78 and 1.16 (close to that of air, κ = 1) at operation frequencies of 100 kilohertz and 1 megahertz, respectively. The films are mechanically and electrically robust, with a breakdown strength of 7.3 megavolts per centimetre, which exceeds requirements. Cross-sectional imaging reveals that amorphous boron nitride prevents the diffusion of cobalt atoms into silicon under very harsh conditions, in contrast to reference barriers. Our results demonstrate that amorphous boron nitride has excellent low-κ dielectric characteristics for high-performance electronics. 22020-01-0120202020-01-01Articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/236030https://dx.doi.org/urn:doi:10.1038/s41586-020-2375-9reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengEuropean Commission https://doi.org/10.13039/501100000780 881603European Commission https://doi.org/10.13039/501100000780 785219Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 PCI2018-093120Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 SEV-2017-0706open accesshttp://purl.org/coar/access_right/c_abf2Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.https://rightsstatements.org/vocab/InC/1.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2360302026-06-06T12:50:31Z |
| dc.title.none.fl_str_mv |
Ultralow-dielectric-constant amorphous boron nitride |
| title |
Ultralow-dielectric-constant amorphous boron nitride |
| spellingShingle |
Ultralow-dielectric-constant amorphous boron nitride Hong, Seokmo Electronic devices Two-dimensional materials |
| title_short |
Ultralow-dielectric-constant amorphous boron nitride |
| title_full |
Ultralow-dielectric-constant amorphous boron nitride |
| title_fullStr |
Ultralow-dielectric-constant amorphous boron nitride |
| title_full_unstemmed |
Ultralow-dielectric-constant amorphous boron nitride |
| title_sort |
Ultralow-dielectric-constant amorphous boron nitride |
| dc.creator.none.fl_str_mv |
Hong, Seokmo Lee, Chang-Seok|||0000-0002-6078-3874 Lee, Min-Hyun Lee, Yeongdong|||0000-0001-9749-5270 Ma, Kyung Yeol Kim, Gwangwoo|||0000-0001-8519-4411 Yoon, Seong In Ihm, Kyuwook Ihm Kim, Ki-Jeong Shin, Tae Joo Kim, Sang Won Jeon, Eun-chae|||0000-0002-6951-219X Jeon, Hansol Kim, Ju-Young Lee, Hyung-Ik Lee, Zonghoon Antidormi, Aleandro|||0000-0002-5266-8147 Roche, Stephan|||0000-0003-0323-4665 Chhowalla, Manish Shin, Hyeon-Jin|||0000-0002-6992-6341 Shin, Hyeon Suk|||0000-0003-0495-7443 |
| author |
Hong, Seokmo |
| author_facet |
Hong, Seokmo Lee, Chang-Seok|||0000-0002-6078-3874 Lee, Min-Hyun Lee, Yeongdong|||0000-0001-9749-5270 Ma, Kyung Yeol Kim, Gwangwoo|||0000-0001-8519-4411 Yoon, Seong In Ihm, Kyuwook Ihm Kim, Ki-Jeong Shin, Tae Joo Kim, Sang Won Jeon, Eun-chae|||0000-0002-6951-219X Jeon, Hansol Kim, Ju-Young Lee, Hyung-Ik Lee, Zonghoon Antidormi, Aleandro|||0000-0002-5266-8147 Roche, Stephan|||0000-0003-0323-4665 Chhowalla, Manish Shin, Hyeon-Jin|||0000-0002-6992-6341 Shin, Hyeon Suk|||0000-0003-0495-7443 |
| author_role |
author |
| author2 |
Lee, Chang-Seok|||0000-0002-6078-3874 Lee, Min-Hyun Lee, Yeongdong|||0000-0001-9749-5270 Ma, Kyung Yeol Kim, Gwangwoo|||0000-0001-8519-4411 Yoon, Seong In Ihm, Kyuwook Ihm Kim, Ki-Jeong Shin, Tae Joo Kim, Sang Won Jeon, Eun-chae|||0000-0002-6951-219X Jeon, Hansol Kim, Ju-Young Lee, Hyung-Ik Lee, Zonghoon Antidormi, Aleandro|||0000-0002-5266-8147 Roche, Stephan|||0000-0003-0323-4665 Chhowalla, Manish Shin, Hyeon-Jin|||0000-0002-6992-6341 Shin, Hyeon Suk|||0000-0003-0495-7443 |
| author2_role |
author author author author author author author author author author author author author author author author author author author author |
| dc.subject.none.fl_str_mv |
Electronic devices Two-dimensional materials |
| topic |
Electronic devices Two-dimensional materials |
| description |
Decrease in processing speed due to increased resistance and capacitance delay is a major obstacle for the down-scaling of electronics. Minimizing the dimensions of interconnects (metal wires that connect different electronic components on a chip) is crucial for the miniaturization of devices. Interconnects are isolated from each other by non-conducting (dielectric) layers. So far, research has mostly focused on decreasing the resistance of scaled interconnects because integration of dielectrics using low-temperature deposition processes compatible with complementary metal-oxide-semiconductors is technically challenging. Interconnect isolation materials must have low relative dielectric constants (κ values), serve as diffusion barriers against the migration of metal into semiconductors, and be thermally, chemically and mechanically stable. Specifically, the International Roadmap for Devices and Systems recommends the development of dielectrics with κ values of less than 2 by 2028. Existing low-κ materials (such as silicon oxide derivatives, organic compounds and aerogels) have κ values greater than 2 and poor thermo-mechanical properties. Here we report three-nanometre-thick amorphous boron nitride films with ultralow κ values of 1.78 and 1.16 (close to that of air, κ = 1) at operation frequencies of 100 kilohertz and 1 megahertz, respectively. The films are mechanically and electrically robust, with a breakdown strength of 7.3 megavolts per centimetre, which exceeds requirements. Cross-sectional imaging reveals that amorphous boron nitride prevents the diffusion of cobalt atoms into silicon under very harsh conditions, in contrast to reference barriers. Our results demonstrate that amorphous boron nitride has excellent low-κ dielectric characteristics for high-performance electronics. |
| publishDate |
2020 |
| dc.date.none.fl_str_mv |
2 2020-01-01 2020 2020-01-01 |
| dc.type.none.fl_str_mv |
Article http://purl.org/coar/resource_type/c_6501 AM http://purl.org/coar/version/c_ab4af688f83e57aa |
| dc.type.openaire.fl_str_mv |
info:eu-repo/semantics/article |
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article |
| dc.identifier.none.fl_str_mv |
https://ddd.uab.cat/record/236030 https://dx.doi.org/urn:doi:10.1038/s41586-020-2375-9 |
| url |
https://ddd.uab.cat/record/236030 https://dx.doi.org/urn:doi:10.1038/s41586-020-2375-9 |
| dc.language.none.fl_str_mv |
Inglés eng |
| language_invalid_str_mv |
Inglés |
| language |
eng |
| dc.relation.none.fl_str_mv |
European Commission https://doi.org/10.13039/501100000780 881603 European Commission https://doi.org/10.13039/501100000780 785219 Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 PCI2018-093120 Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 SEV-2017-0706 |
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open access http://purl.org/coar/access_right/c_abf2 https://rightsstatements.org/vocab/InC/1.0/ |
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info:eu-repo/semantics/openAccess |
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open access http://purl.org/coar/access_right/c_abf2 https://rightsstatements.org/vocab/InC/1.0/ |
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openAccess |
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application/pdf |
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