Low dark count geiger mode avalanche photodiodes fabricated in conventional CMOS technologies

Avalanche photodiodes operated in the Geiger mode present very high intrinsic gain and fast time response, which make the sensor an ideal option for those applications in which detectors with high sensitivity and velocity are required. Moreover, they are compatible with conventional CMOS technologie...

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Autores: Vilella Figueras, Eva, Arbat Casas, Anna, Alonso Casanovas, Oscar, Comerma Montells, Albert, Trenado, J. (Juan), Vilà i Arbonès, Anna Maria, Casanova Mohr, Raimon, Garrido Beltrán, Lluís, Diéguez Barrientos, Àngel
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2011
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/29242
Acceso en línea:https://hdl.handle.net/2445/29242
Access Level:acceso abierto
Palabra clave:Fotònica
Metall-òxid-semiconductors complementaris
Sistemes d'imatges
Photonics
Complementary metal oxide semiconductors
Imaging systems
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spelling Low dark count geiger mode avalanche photodiodes fabricated in conventional CMOS technologiesVilella Figueras, EvaArbat Casas, AnnaAlonso Casanovas, OscarComerma Montells, AlbertTrenado, J. (Juan)Vilà i Arbonès, Anna MariaCasanova Mohr, RaimonGarrido Beltrán, LluísDiéguez Barrientos, ÀngelFotònicaMetall-òxid-semiconductors complementarisSistemes d'imatgesPhotonicsComplementary metal oxide semiconductorsImaging systemsAvalanche photodiodes operated in the Geiger mode present very high intrinsic gain and fast time response, which make the sensor an ideal option for those applications in which detectors with high sensitivity and velocity are required. Moreover, they are compatible with conventional CMOS technologies, allowing sensor and front-end electronics integration within the pixel cell. Despite these excellent qualities, the photodiode suffers from high intrinsic noise, which degrades the performance of the detector and increases the memory area to store the total amount of information generated. In this work, a new front-end circuit that allows low reverse bias overvoltage sensor operation to reduce the noise in Geiger mode avalanche photodiode pixel detectors is presented. The proposed front-end circuit also enables to operate the sensor in the gated acquisition mode to further reduce the noise. Experimental characterization of the fabricated pixel with the conventional HV-AMS 0.35µm technology is also presented in this article.American Scientific Publishers2012201220112012info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersion4 p.application/pdfhttps://hdl.handle.net/2445/29242Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésVersió postprint del document publicat a: http://dx.doi.org/10.1166/sl.2011.1814Sensor Letters, 2011, vol. 9, num. 6, p. 2408-2411http://dx.doi.org/10.1166/sl.2011.1814(c) American Scientific Publishers, 2011info:eu-repo/semantics/openAccessoai:recercat.cat:2445/292422026-05-29T05:05:01Z
dc.title.none.fl_str_mv Low dark count geiger mode avalanche photodiodes fabricated in conventional CMOS technologies
title Low dark count geiger mode avalanche photodiodes fabricated in conventional CMOS technologies
spellingShingle Low dark count geiger mode avalanche photodiodes fabricated in conventional CMOS technologies
Vilella Figueras, Eva
Fotònica
Metall-òxid-semiconductors complementaris
Sistemes d'imatges
Photonics
Complementary metal oxide semiconductors
Imaging systems
title_short Low dark count geiger mode avalanche photodiodes fabricated in conventional CMOS technologies
title_full Low dark count geiger mode avalanche photodiodes fabricated in conventional CMOS technologies
title_fullStr Low dark count geiger mode avalanche photodiodes fabricated in conventional CMOS technologies
title_full_unstemmed Low dark count geiger mode avalanche photodiodes fabricated in conventional CMOS technologies
title_sort Low dark count geiger mode avalanche photodiodes fabricated in conventional CMOS technologies
dc.creator.none.fl_str_mv Vilella Figueras, Eva
Arbat Casas, Anna
Alonso Casanovas, Oscar
Comerma Montells, Albert
Trenado, J. (Juan)
Vilà i Arbonès, Anna Maria
Casanova Mohr, Raimon
Garrido Beltrán, Lluís
Diéguez Barrientos, Àngel
author Vilella Figueras, Eva
author_facet Vilella Figueras, Eva
Arbat Casas, Anna
Alonso Casanovas, Oscar
Comerma Montells, Albert
Trenado, J. (Juan)
Vilà i Arbonès, Anna Maria
Casanova Mohr, Raimon
Garrido Beltrán, Lluís
Diéguez Barrientos, Àngel
author_role author
author2 Arbat Casas, Anna
Alonso Casanovas, Oscar
Comerma Montells, Albert
Trenado, J. (Juan)
Vilà i Arbonès, Anna Maria
Casanova Mohr, Raimon
Garrido Beltrán, Lluís
Diéguez Barrientos, Àngel
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Fotònica
Metall-òxid-semiconductors complementaris
Sistemes d'imatges
Photonics
Complementary metal oxide semiconductors
Imaging systems
topic Fotònica
Metall-òxid-semiconductors complementaris
Sistemes d'imatges
Photonics
Complementary metal oxide semiconductors
Imaging systems
description Avalanche photodiodes operated in the Geiger mode present very high intrinsic gain and fast time response, which make the sensor an ideal option for those applications in which detectors with high sensitivity and velocity are required. Moreover, they are compatible with conventional CMOS technologies, allowing sensor and front-end electronics integration within the pixel cell. Despite these excellent qualities, the photodiode suffers from high intrinsic noise, which degrades the performance of the detector and increases the memory area to store the total amount of information generated. In this work, a new front-end circuit that allows low reverse bias overvoltage sensor operation to reduce the noise in Geiger mode avalanche photodiode pixel detectors is presented. The proposed front-end circuit also enables to operate the sensor in the gated acquisition mode to further reduce the noise. Experimental characterization of the fabricated pixel with the conventional HV-AMS 0.35µm technology is also presented in this article.
publishDate 2011
dc.date.none.fl_str_mv 2011
2012
2012
2012
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/29242
url https://hdl.handle.net/2445/29242
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Versió postprint del document publicat a: http://dx.doi.org/10.1166/sl.2011.1814
Sensor Letters, 2011, vol. 9, num. 6, p. 2408-2411
http://dx.doi.org/10.1166/sl.2011.1814
dc.rights.none.fl_str_mv (c) American Scientific Publishers, 2011
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) American Scientific Publishers, 2011
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 4 p.
application/pdf
dc.publisher.none.fl_str_mv American Scientific Publishers
publisher.none.fl_str_mv American Scientific Publishers
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,811543

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